• Patent Title: On-chip micro electron source and manufacturing method thereof
  • Application No.: US17292862
    Application Date: 2019-11-07
  • Publication No.: US11355301B2
    Publication Date: 2022-06-07
  • Inventor: Xianlong WeiWei Yang
  • Applicant: PEKING UNIVERSITY
  • Applicant Address: CN Beijing
  • Assignee: PEKING UNIVERSITY
  • Current Assignee: PEKING UNIVERSITY
  • Current Assignee Address: CN Beijing
  • Agency: Fenwick & West LLP
  • Priority: CN201811340399.2 20181112,CN201821854867.3 20181112
  • International Application: PCT/CN2019/116135 WO 20191107
  • International Announcement: WO2020/098555 WO 20200522
  • Main IPC: H01J9/18
  • IPC: H01J9/18 H01J3/02
On-chip micro electron source and manufacturing method thereof
Abstract:
Provided are an on-chip miniature electron source and a method for manufacturing the same. The on-chip miniature electron source includes: a thermal conductive layer; an insulating layer provided on the thermal conductive layer, where the insulating layer is made of a resistive-switching material, and at least one through hole is provided in the insulating layer; and at least one electrode pair provided on the insulating layer, where at least one electrode of the electrode pair is in contact with and connected to the thermal conductive layer via the through hole, where there is a gap between two electrodes of the electrode pair, and a tunnel junction is formed within a region of the insulating layer under the gap. Thus, heat generated by the on-chip micro electron source can be dissipated through the electrode and the thermal conductive layer, thereby significantly improving heat dissipation ability of the on-chip miniature electron source.
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