公开(公告)号：US20240242916A1

公开(公告)日：2024-07-18

申请号：US18433175

申请日：2024-02-05

Applicant: ELVE INC.

Inventor： Diana Gamzina Daugherty

IPC: H01J23/083 ,  H01J9/18 ,  H01J23/06 ,  H01J23/16 ,  H01J25/34 ,  H01J29/62 ,  H01J29/70

CPC classification number: H01J23/083 ,  H01J9/18 ,  H01J23/06 ,  H01J23/165 ,  H01J29/62 ,  H01J29/70 ,  H01J25/34 ,  H01J2229/581 ,  H01J2229/582

Abstract: Vacuum electron devices (VEDs) having a plurality of two-dimensional layers of various materials are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together into a sandwich-like structure. The manufacturing process enables incorporation of metallic, magnetic, ceramic materials, and other materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability.

公开(公告)号：US12020890B2

公开(公告)日：2024-06-25

申请号：US18247257

申请日：2021-09-29

Applicant: NCX Corporation

Inventor： Jian Zhang

IPC: H01J1/46 ,  H01J1/304 ,  H01J9/18

CPC classification number: H01J1/46 ,  H01J1/304 ,  H01J9/18

Abstract: A field emission cathode device and formation method involves a rotating field emission cathode including a field emission material deposited on a surface thereof, the field emission cathode rotating about an axis and being electrically connected to ground, and a planar gate electrode extending parallel to the surface of the rotating field emission cathode and defining a gap therebetween. A gate voltage source is electrically connected to the gate electrode and is arranged to interact therewith to generate an electric field, with the electric field inducing a portion of the surface of the rotating field emission cathode adjacent to the gate electrode to emit electrons from the field emission material toward and through the gate electrode.

公开(公告)号：US11915900B2

公开(公告)日：2024-02-27

申请号：US17525698

申请日：2021-11-12

Applicant: ELVE INC.

Inventor： Diana Gamzina Daugherty

IPC: H01J23/083 ,  H01J23/06 ,  H01J9/18 ,  H01J29/62 ,  H01J29/70 ,  H01J23/16 ,  H01J25/34

CPC classification number: H01J23/083 ,  H01J9/18 ,  H01J23/06 ,  H01J23/165 ,  H01J29/62 ,  H01J29/70 ,  H01J25/34 ,  H01J2229/581 ,  H01J2229/582

Abstract: Vacuum electron devices (VEDs) are produced having a plurality of two-dimensional layers of various materials that are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, and the like. The manufacturing process enables incorporation of metallic, magnetic, and ceramic materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. The VEDs so produced include a combination of magnetic and electrostatic lenses for electron beam control.

公开(公告)号：US20220157550A1

公开(公告)日：2022-05-19

申请号：US17525698

申请日：2021-11-12

Applicant: ELVE INC.

Inventor： Diana Gamzina Daugherty

IPC: H01J29/62 ,  H01J9/18 ,  H01J29/70

Abstract: Vacuum electron devices (VEDs) are produced having a plurality of two-dimensional layers of various materials that are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, and the like. The manufacturing process enables incorporation of metallic, magnetic, and ceramic materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. The VEDs so produced include a combination of magnetic and electrostatic lenses for electron beam control.

公开(公告)号：US11232926B2

公开(公告)日：2022-01-25

申请号：US15775636

申请日：2016-10-28

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Zoryana Terletska ,  Tobias Schlenk

IPC: H01J35/06 ,  G01N23/04 ,  H01J9/18

Abstract: The invention relates to a cathode for an X-ray tube and a corresponding method for assembly. The cathode comprises a filament (22), at least two support structures (21), a body structure comprising a recess for the filament. The filament is provided to emit electrons towards an anode in an electron emitting direction (25). The filament is held by the support structures, which are fixedly connected to the body structure. The filament is totally recrystallized before assembly and has an at least partial helical structure. The support structures comprise a reception end (24) for releasably receiving two ends of the filament by means of a locking mechanism and the complete alignment of the filament and the recess is given by the geometry of the filament, the at least two support structures and the body structure which comprises a recess for the filament. An improved and facilitated cathode assembly with increased reliability of the precision of the positioning in operation is achieved.

公开(公告)号：US20210398769A1

公开(公告)日：2021-12-23

申请号：US17292695

申请日：2019-11-07

Applicant: PEKING UNIVERSITY

Inventor： Xianlong WEI

IPC: H01J35/16 ,  H01J35/14 ,  H01J35/12 ,  H01J9/18

Abstract: An on-chip miniature X-ray source, comprising: an on-chip miniature electron source (10); a first insulating spacer (11) located on one side of the on-chip miniature electron source (10) emitting electrons, the first insulating spacer (11) being of a cavity structure; and an anode (12) located on the first insulating spacer (11), a closed vacuum cavity being formed between the on-chip miniature electron source (10) and the anode (12). The on-chip miniature electron source can be obtained by means of a micromachining technique, further reducing the size thereof, and reducing the manufacturing costs. The on-chip miniature X-ray source has the advantages of stable X-ray dose, low operation vacuum requirement, fast switch response, integrated and mass processing, etc. and can be used in various types of small and portable X-ray detection, analysis and treatment devices.

公开(公告)号：US11189451B2

公开(公告)日：2021-11-30

申请号：US17110167

申请日：2020-12-02

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Itay Asulin ,  Ofer Yuli ,  Lavy Shavit ,  Yoram Uziel ,  Guy Eytan ,  Natan Schlimoff ,  Igor Krivts (Krayvitz) ,  Jacob Levin ,  Israel Avneri

IPC: H01J1/92 ,  H01J1/304 ,  H01J9/02 ,  H01J9/18

Abstract: A charged particle beam source that may include an emitter that has a tip for emitting charged particles; a socket; electrodes; a filament that is connected to the electrodes and to the emitter; electrodes for providing electrical signals to the filament; a support element that is connected to the emitter; and a support structure that comprises one or more interfaces for contacting only a part of the support element while supporting the support element.

公开(公告)号：US11177104B2

公开(公告)日：2021-11-16

申请号：US17110678

申请日：2020-12-03

Applicant: Evince Technology Limited

Inventor： Gareth Andrew Taylor ,  David Andrew James Moran ,  John Peter Carr ,  Paul Farrar ,  Mark Kieran Massey

IPC: H01J19/30 ,  H01J19/44 ,  H01J9/18 ,  H01J19/38 ,  H01J19/48 ,  H01J21/10

Abstract: A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

公开(公告)号：US10910187B2

公开(公告)日：2021-02-02

申请号：US16140980

申请日：2018-09-25

Applicant: General Electric Company

Inventor： Andrew Marconnet ,  Gregory Steinlage ,  Sandhya Abhivandana Dammu ,  Evan Lampe ,  Donald Allen ,  Michael Utschig ,  William Scott ,  David Bateman

IPC: H01J35/06 ,  H01J9/18 ,  A61B6/03 ,  G01V5/00 ,  H01J35/10

Abstract: At least one emitter formed of an electron emissive material is positioned on a cathode assembly and is readily and reliably connected to at least one mounting member of the cathode assembly. The connections between the at least one emitter and an emitter support structure are formed directly between the at least one emitter and the emitter support structure by utilizing the at one mounting member on the emitter support structure that are positioned adjacent the at least one emitter and heated to secure the at least one emitter to the emitter support structure by welding the at least one mounting member to the at least one emitter and emitter support structure.

公开(公告)号：US10811212B2

公开(公告)日：2020-10-20

申请号：US16539943

申请日：2019-08-13

Applicant: Modern Electron, LLC

Inventor： Max N. Mankin ,  Chloe A. M. Fabien ,  Gary D. Foley ,  Andrew T. Koch ,  William Kokonaski ,  Andrew R. Lingley ,  Tony S. Pan ,  Yong Sun

IPC: H01J19/44 ,  H01J9/18 ,  H01J19/38

Abstract: Disclosed embodiments include vacuum electronic devices and methods of fabricating a vacuum electronic device. In a non-limiting embodiment, a vacuum electronic device includes an electrode that defines discrete support structures therein. A first film layer is disposed on the electrode about a periphery of the electrode and on the support structures. A second film layer is disposed on the first film layer. The second film layer includes electrically conductive grid lines patterned therein that are supported by and suspended between the support structures.