- 专利标题： Field effect transistor
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申请号： US17173356申请日： 2021-02-11
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公开(公告)号： US11355401B1公开(公告)日： 2022-06-07
- 发明人: Effendi Leobandung , Veeraraghavan S. Basker , Junli Wang , Albert Chu
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Jeffrey M. Ingalls
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/092
摘要：
A method of forming a field effect transistor (FET) includes providing a substrate; forming an nFET source/drain region on the substrate; forming a pFET source/drain region on the substrate and adjacent to the nFET region, the nFET source/drain region directly contacting the pFET source/drain region; forming a first insulator layer on the nFET source/drain region and the pFET source/drain region; etching away a portion of the first insulator layer between the nFET source/drain region and the pFET source/drain region down to a level of the substrate, thereby breaking the contact between the nFET source/drain region and the pFET source/drain region; and forming a second insulator layer between the nFET source/drain region and the pFET source/drain region in a space formed by the etching, the second insulator layer extending from the substrate to a top of the first insulator layer. The second insulator layer is harder than the first insulator layer.
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