Invention Grant
- Patent Title: Steep sloped vertical tunnel field-effect transistor
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Application No.: US16836710Application Date: 2020-03-31
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Publication No.: US11355590B2Publication Date: 2022-06-07
- Inventor: Peter Ramvall , Matthias Passlack
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/12 ; H01L29/20 ; H01L21/02 ; H01L29/66 ; H01L29/15
Abstract:
The current disclosure describes a vertical tunnel FET device including a vertical P-I-N heterojunction structure of a P-doped nanowire gallium nitride source/drain, an intrinsic InN layer, and an N-doped nanowire gallium nitride source/drain. A high-K dielectric layer and a metal gate wrap around the intrinsic InN layer.
Public/Granted literature
- US20200227524A1 STEEP SLOPED VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR Public/Granted day:2020-07-16
Information query
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