Invention Grant
- Patent Title: Single crystal diamond and semiconductor element using same
-
Application No.: US16956499Application Date: 2018-09-19
-
Publication No.: US11355591B2Publication Date: 2022-06-07
- Inventor: Shinya Ohmagari , Hideaki Yamada , Akiyoshi Chayahara , Yoshiaki Mokuno
- Applicant: National Institute of Advanced Industrial Science and Technology
- Applicant Address: JP Tokyo
- Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: JPJP2017-243965 20171220,JPJP2018-124605 20180629
- International Application: PCT/JP2018/034651 WO 20180919
- International Announcement: WO2019/123745 WO 20190627
- Main IPC: C23C16/27
- IPC: C23C16/27 ; C30B25/02 ; C30B29/04 ; H01L29/16 ; H01L21/02 ; H01L29/34 ; H01L29/66 ; H01L29/872
Abstract:
Provided is a single crystal diamond having a lowered dislocation density. The single crystal diamond (10) is provided with single crystal diamond layers (2, 3). One single crystal diamond layer (2) is formed on a diamond substrate (1) and contains point defects. The other single crystal diamond layer (3) is grown on the single crystal diamond layer (2). The single crystal diamond layers (2, 3) have a lower dislocation density than the diamond substrate.
Public/Granted literature
- US20210098578A1 SINGLE CRYSTAL DIAMOND AND SEMICONDUCTOR ELEMENT USING SAME Public/Granted day:2021-04-01
Information query
IPC分类:
