- 专利标题： Aluminum nitride substrate removal for ultraviolet light-emitting devices
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申请号： US16929634申请日： 2020-07-15
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公开(公告)号： US11355664B2公开(公告)日： 2022-06-07
- 发明人: James R. Grandusky , Leo J. Schowalter , Craig Moe
- 申请人： James R. Grandusky , Leo J. Schowalter , Craig Moe
- 申请人地址： US NY Waterford; US NY Latham; US NY Latham
- 专利权人： James R. Grandusky,Leo J. Schowalter,Craig Moe
- 当前专利权人： James R. Grandusky,Leo J. Schowalter,Craig Moe
- 当前专利权人地址： US NY Waterford; US NY Latham; US NY Latham
- 代理机构： Morgan, Lewis & Bockius LLP
- 主分类号： H01L33/32
- IPC分类号： H01L33/32 ; H01L33/00 ; H01L33/20 ; H01L21/78
摘要：
In various embodiments, extraction efficiency of light-emitting devices fabricated on aluminum nitride substrates is enhanced via removal of at least a portion of the substrate.
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