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公开(公告)号：US09680057B2
公开(公告)日：2017-06-13
申请号：US15267458
申请日：2016-09-16
申请人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
发明人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
IPC分类号： H01L33/14 , H01L33/06 , H01L33/32 , H01L33/46 , H01L33/44 , H01L33/00 , H01L33/02 , H01L33/36
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/025 , H01L33/145 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/46
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
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公开(公告)号：US10211369B2
公开(公告)日：2019-02-19
申请号：US15592890
申请日：2017-05-11
申请人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
发明人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
IPC分类号： H01L33/06 , H01L33/14 , H01L33/32 , H01L33/46 , H01L33/00 , H01L33/02 , H01L33/36 , H01L33/40
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
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公开(公告)号：US09806227B2
公开(公告)日：2017-10-31
申请号：US15267470
申请日：2016-09-16
申请人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
发明人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00 , H01L33/36 , H01L33/46 , H01L33/02 , H01L33/14 , H01L33/44
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/025 , H01L33/145 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/46
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
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公开(公告)号：US11355664B2
公开(公告)日：2022-06-07
申请号：US16929634
申请日：2020-07-15
申请人： James R. Grandusky , Leo J. Schowalter , Craig Moe
发明人： James R. Grandusky , Leo J. Schowalter , Craig Moe
摘要： In various embodiments, extraction efficiency of light-emitting devices fabricated on aluminum nitride substrates is enhanced via removal of at least a portion of the substrate.
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公开(公告)号：US10756234B2
公开(公告)日：2020-08-25
申请号：US15977031
申请日：2018-05-11
申请人： James R. Grandusky , Leo J. Schowalter , Craig Moe
发明人： James R. Grandusky , Leo J. Schowalter , Craig Moe
摘要： In various embodiments, extraction efficiency of light-emitting devices fabricated on aluminum nitride substrates is enhanced via removal of at least a portion of the substrate.
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公开(公告)号：US10700237B2
公开(公告)日：2020-06-30
申请号：US16239728
申请日：2019-01-04
申请人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
发明人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
IPC分类号： H01L33/06 , H01L33/32 , H01L33/14 , H01L33/46 , H01L33/00 , H01L33/02 , H01L33/36 , H01L33/40
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
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公开(公告)号：US10211368B2
公开(公告)日：2019-02-19
申请号：US15587879
申请日：2017-05-05
申请人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
发明人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
IPC分类号： H01L33/06 , H01L33/14 , H01L33/32 , H01L33/46 , H01L33/00 , H01L33/02 , H01L33/36 , H01L33/40
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
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公开(公告)号：US11384449B2
公开(公告)日：2022-07-12
申请号：US16817876
申请日：2020-03-13
IPC分类号： C30B25/10 , C30B29/40 , H01S5/02 , H01S5/343 , C30B23/00 , C30B33/06 , H01L21/20 , H01L33/06 , H01L33/00
摘要： In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.
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公开(公告)号：US09935247B2
公开(公告)日：2018-04-03
申请号：US14806761
申请日：2015-07-23
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
CPC分类号： H01L33/56 , H01L33/54 , H01L33/58 , H01L2933/005 , H01L2933/0058
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
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公开(公告)号：US09437430B2
公开(公告)日：2016-09-06
申请号：US12020006
申请日：2008-01-25
IPC分类号： H01L31/0328 , H01L21/02 , H01L33/08 , H01L33/12
CPC分类号： H01L21/0262 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L33/08 , H01L33/12
摘要： Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
摘要翻译： 制造半导体结构以包括超过其预测临界厚度的应变外延层。
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