Invention Grant
- Patent Title: Semiconductor laser diode integrated with memristor
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Application No.: US17004955Application Date: 2020-08-27
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Publication No.: US11355899B2Publication Date: 2022-06-07
- Inventor: Bassem Tossoun , Di Liang , John Paul Strachan
- Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Applicant Address: US TX Houston
- Assignee: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Current Assignee: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Current Assignee Address: US TX Houston
- Agency: Sheppard Mullin Richter & Hampton LLP
- Main IPC: H01S5/026
- IPC: H01S5/026 ; H01L45/00 ; H01S5/042 ; H01S5/0225 ; H01S5/30 ; H01S5/10

Abstract:
An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength.
Public/Granted literature
- US20220069541A1 SEMICONDUCTOR LASER DIODE INTEGRATED WITH MEMRISTOR Public/Granted day:2022-03-03
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