Invention Grant
- Patent Title: Error correction code scrub scheme
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Application No.: US16871329Application Date: 2020-05-11
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Publication No.: US11360848B2Publication Date: 2022-06-14
- Inventor: Jongtae Kwak
- Applicant: Micron Technology, inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, inc.
- Current Assignee: Micron Technology, inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/10 ; G11C11/22 ; G11C11/406 ; G11C29/52 ; G11C11/4076 ; G11C11/4099 ; G11C7/10 ; G11C29/04

Abstract:
Methods, systems, and devices for an error correcting code scrub scheme are described. A memory device may correct an error associated with a first data bit or a first parity bit of a plurality of data bits and a plurality of parity bits, respectively. The memory device may correct the error by reading each of the plurality of data bits and the plurality of parity bits from a memory array, and determining that an error associated with a single bit exists. The memory device may then correct the determined single-bit error, and may write the corrected bit directly back to the memory array.
Public/Granted literature
- US20200341841A1 ERROR CORRECTION CODE SCRUB SCHEME Public/Granted day:2020-10-29
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