An image sensor includes a substrate having a plurality of small photodiodes and a plurality of large photodiodes surrounding the small photodiodes. The substrate further includes a plurality of deep trench isolation structures in regions of the substrate between ones of the small photodiodes and the large photodiodes. Each of large photodiodes having a full well capacity larger than each of the small photodiodes. The image sensor further includes an array of color filters disposed over the substrate, a first and second buffer layer disposed between the substrate and the array of color filters, metal grid structures disposed between the color filters and above the first buffer layer, and an attenuation layer portion above a region of the substrate between ones of the large and small photodiodes, the attenuation layer portion is between the first and second buffer layers and normal to an upper surface of the substrate.