公开(公告)号：US20250126373A1

公开(公告)日：2025-04-17

申请号：US18488492

申请日：2023-10-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanliang Liu ,  Bill Phan ,  Duli Mao

IPC: H04N25/59 ,  H04N25/709 ,  H04N25/77

Abstract: Image sensors with improved memory effect are disclosed herein. In one embodiment, a method for reducing image lag associated with a pixel included in a plurality of pixels is described. The pixel includes a photodiode, a first floating diffusion coupled to the photodiode through a transfer transistor, a second floating diffusion coupled to the first floating diffusion through a dual floating diffusion transistor, and a lateral overflow integration capacitor coupled between the second floating diffusion and a bias voltage source. The lateral overflow integration capacitor is further coupled to a pixel reference voltage source through a reset transistor. Operation of the pixel comprises an idle period and an integration period after the idle period. The method also includes configuring the lateral overflow integration capacitor to be either zero-biased or forward-biased during the idle period.

公开(公告)号：US12177589B2

公开(公告)日：2024-12-24

申请号：US18154770

申请日：2023-01-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Bill Phan ,  Duli Mao ,  Yuanliang Liu ,  Heesoo Kang ,  Yifei Du ,  Woon Il Choi

IPC: H04N25/77 ,  H04N25/59

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A plurality of capacitor-switch pairs is coupled between the reset transistor and a bias voltage source. Each of the plurality of capacitor-switch pairs includes a lateral overflow integration capacitor (LOFIC) and a switch transistor coupled to the LOFIC.

公开(公告)号：US11217613B2

公开(公告)日：2022-01-04

申请号：US16687660

申请日：2019-11-18

Applicant: OmniVision Technologies, Inc.

Inventor： Bill Phan ,  Yuanliang Liu ,  Duli Mao ,  Seong Yeol Mun ,  Alireza Bonakdar

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor includes a substrate material. The substrate material includes a plurality of photodiodes disposed therein. The plurality of photodiodes includes a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) larger than the SPDs. An array of color filters is disposed over the substrate material. A buffer layer is disposed between the substrate material and the array of color filters. A metal pattern is disposed between the color filters in the array of color filters, and between the array of color filters and the buffer layer. An attenuation layer is disposed between the substrate material and the array of color filters. The attenuation layer is above and aligned with the plurality of SPDs and a portion of each of the plurality of LPDs. An edge of the attenuation layer is over one of the plurality of LPDs.

公开(公告)号：US11978753B2

公开(公告)日：2024-05-07

申请号：US17307789

申请日：2021-05-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanliang Liu ,  Hui Zang

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14687

Abstract: Process to release Silicon stress in forming CMOS image sensor. In one embodiment, a method for manufacturing an image sensor includes providing a first wafer that is a semiconductor substrate, where the first wafer has a first side and a second side opposite from the first side. The method also includes attaching a second wafer to the second side of the first wafer. The method further includes forming isolation structures in the second wafer by etching. The isolation structures are bounded by the second side of the first wafer. The method also includes growing an epitaxial layer between individual isolation structures.

公开(公告)号：US11527569B2

公开(公告)日：2022-12-13

申请号：US16877077

申请日：2020-05-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Bill Phan ,  Keiji Mabuchi ,  Seong Yeol Mun ,  Yuanliang Liu ,  Vincent Venezia

IPC: H01L27/146 ,  H04N5/378

Abstract: A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.

公开(公告)号：US11329086B2

公开(公告)日：2022-05-10

申请号：US16729176

申请日：2019-12-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanliang Liu ,  Bill Phan ,  Duli Mao ,  Alireza Bonakdar

IPC: H01L27/146

Abstract: Image sensors include a substrate material having a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) disposed therein. A plurality of pixel isolators is formed in the substrate material, each pixel isolator being disposed between one of the SPDs and one of the LPDs. A passivation layer is disposed on the substrate material and a buffer layer is disposed on the passivation layer. A plurality of first metal elements is disposed in the buffer layer, each first metal element being disposed over one of the pixel isolators, and a plurality of second metal elements is disposed over the plurality of first metal elements.

公开(公告)号：US11233080B2

公开(公告)日：2022-01-25

申请号：US16730137

申请日：2019-12-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanliang Liu ,  Bill Phan ,  Duli Mao

IPC: H01L27/146

Abstract: A pixel cell includes a first photodiode, a second photodiode, a first deep trench isolation region, a second deep trench isolation region, a buffer oxide layer, and a light attenuation layer. The attenuation layer partially encapsulates the first photodiode by extending laterally from the first deep trench isolation region to the second deep trench isolation region between the semiconductor material and the buffer oxide layer.

公开(公告)号：US12137296B1

公开(公告)日：2024-11-05

申请号：US18298975

申请日：2023-04-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanliang Liu ,  Bill Phan ,  Duli Mao

IPC: H04N25/771 ,  H04N25/59

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A transfer transistor is coupled between the photodiode and a floating diffusion to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a pixel voltage source and the floating diffusion. A lateral overflow integration capacitor (LOFIC) network includes a first LOFIC coupled between the floating diffusion and the first bias voltage source, and a second LOFIC coupled between the floating diffusion and the second bias voltage source. The first LOFIC is configured to be forward biased and the second LOFIC is configured to be reverse biased at an end of an integration period, and image charge discharged from the first LOFIC and image charge discharged from the second LOFIC compensate each other during a readout period.

公开(公告)号：US11710752B2

公开(公告)日：2023-07-25

申请号：US17118252

申请日：2020-12-10

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanliang Liu ,  Bill Phan ,  Duli Mao ,  Hui Zang

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1463 ,  H01L27/14605 ,  H01L27/14685 ,  H01L27/14621 ,  H01L27/14627

Abstract: A flicker-mitigating pixel-array substrate includes a semiconductor substrate and a metal annulus. The semiconductor substrate includes a small-photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the small-photodiode region in a cross-sectional plane parallel to a back-surface region of the back surface above the small-photodiode region. The metal annulus (i) at least partially fills the trench, (ii) surrounds the small-photodiode region in the cross-sectional plane, and (iii) extends above the back surface. A method for fabricating a flicker-mitigating pixel-array substrate includes forming a metal layer (i) in a trench that surrounds the small-photodiode region in a cross-sectional plane parallel to a back-surface region of the back surface above the small-photodiode region and (ii) on the back-surface region. The method also includes decreasing a thickness of an above-diode section of the metal layer located above the back-surface region.

公开(公告)号：US20210358993A1

公开(公告)日：2021-11-18

申请号：US16877077

申请日：2020-05-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Bill Phan ,  Keiji Mabuchi ,  Seong Yeol Mun ,  Yuanliang Liu ,  Vincent Venezia

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/355

Abstract: A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.