Invention Grant
- Patent Title: Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers
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Application No.: US16881412Application Date: 2020-05-22
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Publication No.: US11362190B2Publication Date: 2022-06-14
- Inventor: Kiuchul Hwang , Brian D. Schultz , John Logan , Robert E. Leoni , Nicholas J. Kolias
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/205 ; H01L29/778 ; H01L29/47
Abstract:
A semiconductor device having a substrate, a pair of Group III-Nitride layers on the substrate forming: a heterojunction with a 2 Dimensional Electron Gas (2DEG) channel in a lower one of the pair of Group III-Nitride layers, a cap beryllium doped Group III-Nitride layer on the upper one of the pair of Group III-Nitride layers; and an electrical contact in Schottky contact with a portion of the cap beryllium doped, Group III-Nitride layer.
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