公开(公告)号：US11594627B2

公开(公告)日：2023-02-28

申请号：US17380379

申请日：2021-07-20

Applicant: Raytheon Company

Inventor： Kiuchul Hwang ,  Brian D. Schultz ,  John Logan ,  Christos Thomidis

IPC: H01L29/778 ,  H01L21/223 ,  H01L29/20 ,  H01L29/207 ,  H01L29/66

Abstract: An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material disposed between an electrically conductive gate electrode contact and a gate region of the Enhancement-Mode HEMT, such doped, Group III-N layer increasing resistivity of the Group III-N material to deplete the 2DEG under the gate at zero bias.

公开(公告)号：US11545566B2

公开(公告)日：2023-01-03

申请号：US16727252

申请日：2019-12-26

Applicant: Raytheon Company

Inventor： Abbas Torabi ,  Brian D. Schultz ,  John Logan

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

Abstract: A High Electron Mobility Transistor structure having: a GaN buffer layer disposed on the substrate; a doped GaN layer disposed on, and in direct contact with, the buffer layer, such doped GaN layer being doped with more than one different dopants; an unintentionally doped (UID) GaN channel layer on, and in direct contact with, the doped GaN layer, such UID GaN channel layer having a 2DEG channel therein; a barrier layer on, and in direct contact with, the UID GaN channel layer. One of the dopants is beryllium and another one of the dopants is carbon.

公开(公告)号：US20210367055A1

公开(公告)日：2021-11-25

申请号：US16881412

申请日：2020-05-22

Applicant: Raytheon Company

Inventor： Kiuchul Hwang ,  Brian D. Schultz ,  John Logan ,  Robert E. Leoni ,  Nicholas J. Kolias

IPC: H01L29/47 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

Abstract: A semiconductor device having a substrate, a pair of Group III-Nitride layers on the substrate forming: a heterojunction with a 2 Dimensional Electron Gas (2DEG) channel in a lower one of the pair of Group III-Nitride layers, a cap beryllium doped Group III-Nitride layer on the upper one of the pair of Group III-Nitride layers; and an electrical contact in Schottky contact with a portion of the cap beryllium doped, Group III-Nitride layer.

公开(公告)号：US11362190B2

公开(公告)日：2022-06-14

申请号：US16881412

申请日：2020-05-22

Applicant: Raytheon Company

Inventor： Kiuchul Hwang ,  Brian D. Schultz ,  John Logan ,  Robert E. Leoni ,  Nicholas J. Kolias

IPC: H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/47

Abstract: A semiconductor device having a substrate, a pair of Group III-Nitride layers on the substrate forming: a heterojunction with a 2 Dimensional Electron Gas (2DEG) channel in a lower one of the pair of Group III-Nitride layers, a cap beryllium doped Group III-Nitride layer on the upper one of the pair of Group III-Nitride layers; and an electrical contact in Schottky contact with a portion of the cap beryllium doped, Group III-Nitride layer.

公开(公告)号：US20210351288A1

公开(公告)日：2021-11-11

申请号：US17380379

申请日：2021-07-20

Applicant: Raytheon Company

Inventor： Kiuchul Hwang ,  Brian D. Schultz ,  John Logan ,  Christos Thomidis

IPC: H01L29/778 ,  H01L21/223 ,  H01L29/20 ,  H01L29/207 ,  H01L29/66

Abstract: An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material disposed between an electrically conductive gate electrode contact and a gate region of the Enhancement-Mode HEMT, such doped, Group III-N layer increasing resistivity of the Group III-N material to deplete the 2DEG under the gate at zero bias.

公开(公告)号：US11101378B2

公开(公告)日：2021-08-24

申请号：US16379077

申请日：2019-04-09

Applicant: Raytheon Company

Inventor： Kiuchul Hwang ,  Brian D. Schultz ,  John Logan ,  Christos Thomidis

IPC: H01L29/778 ,  H01L21/223 ,  H01L29/20 ,  H01L29/207 ,  H01L29/66

Abstract: An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material disposed between an electrically conductive gate electrode contact and a gate region of the Enhancement-Mode HEMT, such doped, Group III-N layer increasing resistivity of the Group III-N material to deplete the 2DEG under the gate at zero bias.

公开(公告)号：US20210202729A1

公开(公告)日：2021-07-01

申请号：US16727252

申请日：2019-12-26

Applicant: Raytheon Company

Inventor： Abbas Torabi ,  Brian D. Schultz ,  John Logan

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20

Abstract: A High Electron Mobility Transistor structure having: a GaN buffer layer disposed on the substrate; a doped GaN layer disposed on, and in direct contact with, the buffer layer, such doped GaN layer being doped with more than one different dopants; an unintentionally doped (UID) GaN channel layer on, and in direct contact with, the doped GaN layer, such UID GaN channel layer having a 2DEG channel therein; a barrier layer on, and in direct contact with, the UID GaN channel layer. One of the dopants is beryllium and another one of the dopants is carbon.

公开(公告)号：US20200328296A1

公开(公告)日：2020-10-15

申请号：US16379077

申请日：2019-04-09

Applicant: Raytheon Company

Inventor： Kiuchul Hwang ,  Brian D. Schultz ,  John Logan ,  Christos Thomidis

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/207 ,  H01L29/66 ,  H01L21/223

Abstract: An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material disposed between an electrically conductive gate electrode contact and a gate region of the Enhancement-Mode HEMT, such doped, Group III-N layer increasing resistivity of the Group III-N material to deplete the 2DEG under the gate at zero bias.