公开(公告)号：US20180204940A1

公开(公告)日：2018-07-19

申请号：US15918339

申请日：2018-03-12

Applicant: Raytheon Company

Inventor： Brian D. Schultz ,  Eduardo M. Chumbes

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/207

CPC classification number: H01L29/7783 ,  H01L29/2003 ,  H01L29/207

Abstract: A semiconductor structure having a buffer layer, a pseudomorphic, impurity doped, back-barrier layer disposed on the buffer layer, a channel layer disposed on the back-barrier layer, the channel layer lattice matched to the buffer layer, and a top barrier layer disposed on the channel layer. A Group III-Nitride transition layer is disposed between the buffer layer and the pseudomorphic back-barrier layer. The buffer layer and the pseudomorphic back-barrier layer are both Group III-Nitride materials. The Group III-Nitride material of the buffer layer is different from the Group III-Nitride material in the back-barrier layer. The back-barrier layer has a wider bandgap of than the buffer layer bandgap. The composition of the Group III-Nitride material in the transition layer varies from the composition of the Group III-Nitride material in the buffer layer to the composition of the Group III-Nitride material in the pseudomorphic back-barrier layer as a function of distance from the buffer layer.

公开(公告)号：US11594627B2

公开(公告)日：2023-02-28

申请号：US17380379

申请日：2021-07-20

Applicant: Raytheon Company

Inventor： Kiuchul Hwang ,  Brian D. Schultz ,  John Logan ,  Christos Thomidis

IPC: H01L29/778 ,  H01L21/223 ,  H01L29/20 ,  H01L29/207 ,  H01L29/66

Abstract: An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material disposed between an electrically conductive gate electrode contact and a gate region of the Enhancement-Mode HEMT, such doped, Group III-N layer increasing resistivity of the Group III-N material to deplete the 2DEG under the gate at zero bias.

公开(公告)号：US09960262B2

公开(公告)日：2018-05-01

申请号：US15052977

申请日：2016-02-25

Applicant: Raytheon Company

Inventor： Brian D. Schultz ,  Eduardo M. Chumbes

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/207

CPC classification number: H01L29/7783 ,  H01L29/2003 ,  H01L29/207

Abstract: A semiconductor structure having a buffer layer, a pseudomorphic, impurity doped, back-barrier layer disposed on the buffer layer, a channel layer disposed on the back-barrier layer, the channel layer lattice matched to the buffer layer, and a top barrier layer disposed on the channel layer. A Group III-Nitride transition layer is disposed between the buffer layer and the pseudomorphic back-barrier layer. The buffer layer and the pseudomorphic back-barrier layer are both Group III-Nitride materials. The Group III-Nitride material of the buffer layer is different from the Group III-Nitride material in the back-barrier layer. The back-barrier layer has a wider bandgap of than the buffer layer bandgap. The composition of the Group III-Nitride material in the transition layer varies from the composition of the Group III-Nitride material in the buffer layer to the composition of the Group III-Nitride material in the pseudomorphic back-barrier layer as a function of distance from the buffer layer.

公开(公告)号：US11545566B2

公开(公告)日：2023-01-03

申请号：US16727252

申请日：2019-12-26

Applicant: Raytheon Company

Inventor： Abbas Torabi ,  Brian D. Schultz ,  John Logan

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

Abstract: A High Electron Mobility Transistor structure having: a GaN buffer layer disposed on the substrate; a doped GaN layer disposed on, and in direct contact with, the buffer layer, such doped GaN layer being doped with more than one different dopants; an unintentionally doped (UID) GaN channel layer on, and in direct contact with, the doped GaN layer, such UID GaN channel layer having a 2DEG channel therein; a barrier layer on, and in direct contact with, the UID GaN channel layer. One of the dopants is beryllium and another one of the dopants is carbon.

公开(公告)号：US20210367055A1

公开(公告)日：2021-11-25

申请号：US16881412

申请日：2020-05-22

Applicant: Raytheon Company

Inventor： Kiuchul Hwang ,  Brian D. Schultz ,  John Logan ,  Robert E. Leoni ,  Nicholas J. Kolias

IPC: H01L29/47 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

Abstract: A semiconductor device having a substrate, a pair of Group III-Nitride layers on the substrate forming: a heterojunction with a 2 Dimensional Electron Gas (2DEG) channel in a lower one of the pair of Group III-Nitride layers, a cap beryllium doped Group III-Nitride layer on the upper one of the pair of Group III-Nitride layers; and an electrical contact in Schottky contact with a portion of the cap beryllium doped, Group III-Nitride layer.

公开(公告)号：US20210050216A1

公开(公告)日：2021-02-18

申请号：US16322731

申请日：2017-08-02

Applicant: Raytheon Company

Inventor： Kiuchul Hwang ,  Brian D. Schultz ,  Amanda Kerr

IPC: H01L21/265 ,  H01L21/02 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: A method includes providing a single crystal substrate having a buffer layer on a surface of the substrate. The buffer layer provides a transition between the crystallographic lattice structure of the substrate and the crystallographic lattice structure of the semiconductor layer and has its resistivity increased by ion implanting a dopant into the buffer layer; and forming semiconductor layer on the ion implanted buffer layer. The semiconductor layer may be a wide bandgap semiconductor layer having a high electron mobility transistors formed therein.

公开(公告)号：US10276705B2

公开(公告)日：2019-04-30

申请号：US15918339

申请日：2018-03-12

Applicant: Raytheon Company

Inventor： Brian D. Schultz ,  Eduardo M. Chumbes

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/207

Abstract: A semiconductor structure having a buffer layer, a pseudomorphic, impurity doped, back-barrier layer disposed on the buffer layer, a channel layer disposed on the back-barrier layer, the channel layer lattice matched to the buffer layer, and a top barrier layer disposed on the channel layer. A Group III-Nitride transition layer is disposed between the buffer layer and the pseudomorphic back-barrier layer. The buffer layer and the pseudomorphic back-barrier layer are both Group III-Nitride materials. The Group III-Nitride material of the buffer layer is different from the Group III-Nitride material in the back-barrier layer. The back-barrier layer has a wider bandgap of than the buffer layer bandgap. The composition of the Group III-Nitride material in the transition layer varies from the composition of the Group III-Nitride material in the buffer layer to the composition of the Group III-Nitride material in the pseudomorphic back-barrier layer as a function of distance from the buffer layer.

公开(公告)号：US20180286954A1

公开(公告)日：2018-10-04

申请号：US15472708

申请日：2017-03-29

Applicant: Raytheon Company

Inventor： Brian D. Schultz ,  Theodore D. Kennedy ,  Amanda Kerr ,  William E. Hoke

IPC: H01L29/20 ,  H01L21/02

Abstract: A structure having: a nucleation layer; and a Group III-Nitride structure disposed on a surface of the nucleation layer, the Group III-Nitride structure comprising a plurality of pairs of stacked Group III-Nitride layers, each one of the pairs of layers having a lower layer having a 3D growth structure and each one of the upper one of the pairs of layers having a 2D growth structure. Each one of the lower layers at completion has a surface roughness greater than a surface roughness at completion of an upper one of the pair of layers. Interfaces between each one of the upper layers and each one of the lower layers of the plurality of pairs of stacked Group III-Nitride layers have crystallographic dislocation combinations and/or annihilations therein.

公开(公告)号：US11942919B2

公开(公告)日：2024-03-26

申请号：US17145665

申请日：2021-01-11

Applicant: Raytheon Company

Inventor： John A. Logan ,  Jason C. Soric ,  Adam E. Peczalski ,  Brian D. Schultz ,  Eduardo M. Chumbes

IPC: H03H9/02 ,  H03H3/04 ,  H03H9/17 ,  H03H3/02

CPC classification number: H03H9/02133 ,  H03H3/04 ,  H03H9/02031 ,  H03H9/02102 ,  H03H9/174 ,  H03H9/176 ,  H03H2003/023 ,  H03H2003/0407

Abstract: A strain compensated heterostructure comprising a substrate comprising silicon carbide material; a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of the substrate; a second epitaxial layer formed on the first epitaxial layer opposite the top surface of the substrate, the second epitaxial layer comprising single-crystal scandium aluminum nitride material; and a third epitaxial layer formed on the second epitaxial layer opposite the first epitaxial layer, the third layer comprising single-crystal aluminum nitride material.

公开(公告)号：US20220224306A1

公开(公告)日：2022-07-14

申请号：US17145665

申请日：2021-01-11

Applicant: Raytheon Company

Inventor： John A. Logan ,  Jason C. Soric ,  Adam E. Peczalski ,  Brian D. Schultz ,  Eduardo M. Chumbes

IPC: H03H9/02 ,  H03H3/04 ,  H03H9/17

Abstract: A strain compensated heterostructure comprising a substrate comprising silicon carbide material; a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of the substrate; a second epitaxial layer formed on the first epitaxial layer opposite the top surface of the substrate, the second epitaxial layer comprising single-crystal scandium aluminum nitride material; and a third epitaxial layer formed on the second epitaxial layer opposite the first epitaxial layer, the third layer comprising single-crystal aluminum nitride material.