Invention Grant
- Patent Title: Annealing processes for memory devices
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Application No.: US16855122Application Date: 2020-04-22
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Publication No.: US11362275B2Publication Date: 2022-06-14
- Inventor: Nicolas Louis Gabriel Breil , Siddarth Krishnan , Shashank Sharma , Ria Someshwar , Kai Ng , Deepak Kamalanathan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
Exemplary methods of forming a memory structure may include forming a layer of a transition-metal-and-oxygen-containing material overlying a substrate. The substrate may include a first electrode material. The methods may include annealing the transition-metal-and-oxygen-containing material at a temperature greater than or about 500° C. The annealing may occur for a time period less than or about one second. The methods may also include, subsequent the annealing, forming a layer of a second electrode material over the transition-metal-and-oxygen-containing material.
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