Invention Grant
- Patent Title: MEMS device and manufacturing method of the same
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Application No.: US16726025Application Date: 2019-12-23
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Publication No.: US11365117B2Publication Date: 2022-06-21
- Inventor: Heng-chung Chang , Jhih-Jie Huang , Chih-Ya Tsai , Jing-Yuan Lin
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00

Abstract:
A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed to correspond to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a packaging layer, and at least a portion of the packaging layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the packaging layer define a chamber.
Public/Granted literature
- US20210188626A1 MEMS DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2021-06-24
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