Invention Grant
- Patent Title: Quantum dot, production method thereof, and electronic device including the same
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Application No.: US16245653Application Date: 2019-01-11
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Publication No.: US11365348B2Publication Date: 2022-06-21
- Inventor: Young Seok Park , Eun Joo Jang , Shin Ae Jun , Nayoun Won , Jooyeon Ahn , Sung Woo Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Cantor Colburn LLP
- Priority: KR10-2018-0003830 20180111
- Main IPC: C09K11/70
- IPC: C09K11/70 ; C09K11/02 ; H01L27/32 ; G02F1/13357 ; F21V8/00 ; C09K11/88 ; H05B33/14

Abstract:
A quantum dot includes a core including a first semiconductor nanocrystal and a multi-layered shell disposed on the core and including at least two layers, a production method thereof, and an electronic device including the same. The quantum dot does not include cadmium; the first semiconductor nanocrystal includes a Group III-V compound, the multi-layered shell includes a first layer surrounding at least a portion of a surface of the core, the first layer including a second semiconductor nanocrystal, the second semiconductor nanocrystal including a Group II-V compound, and a second layer disposed on the first layer, the second layer including a third semiconductor nanocrystal, the third semiconductor nanocrystal comprising a composition different from that of the second semiconductor nanocrystal.
Public/Granted literature
- US20190211262A1 QUANTUM DOT, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE INCLUDING THE SAME Public/Granted day:2019-07-11
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