公开(公告)号：US11634628B2

公开(公告)日：2023-04-25

申请号：US16519188

申请日：2019-07-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jihyun Min ,  Seon-Yeong Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Yong Wook Kim

IPC分类号： C09K11/62 ,  C09K11/70 ,  H01L29/12 ,  C09K11/88 ,  H01L27/32

摘要： A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

公开(公告)号：US11578266B2

公开(公告)日：2023-02-14

申请号：US16979340

申请日：2019-03-20

申请人： Nippon Chemical Industrial Co., Ltd.

发明人： Yosuke Takubo ,  Ken Tamura ,  Kazuhiro Nakatsui

IPC分类号： C07F9/06 ,  C07F7/08 ,  C07F9/50 ,  C09K11/70 ,  C01B25/08

摘要： The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass. (For definition of R, see the specification.)

公开(公告)号：US20230043487A1

公开(公告)日：2023-02-09

申请号：US17881210

申请日：2022-08-04

申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

发明人： Gyuweon HWANG ,  Taehwan PARK ,  Hyeri YOO ,  Sangtae KIM ,  Nuri OH ,  Seungki SHIN ,  Namyoung GWAK

IPC分类号： C09K11/02 ,  C09K11/08 ,  C09K11/70 ,  C09K11/88 ,  H01L51/00 ,  H01L51/50

摘要： Disclosed are a surface-modified quantum dot surface-modified with a ligand complex having a specific structure on the surface of the semiconductor nanocrystal, a method for preparing the same, and a quantum dot-polymer composite or electronic device including the same.

公开(公告)号：US11552223B2

公开(公告)日：2023-01-10

申请号：US17332765

申请日：2021-05-27

申请人： Nanoco Technologies, Ltd.

发明人： Cong-Duan Vo ,  Imad Naasani ,  Amilcar Pillay Narrainen

IPC分类号： B32B37/24 ,  H01L33/04 ,  C09K11/02 ,  C09K11/70 ,  C08L33/08 ,  C08L63/00 ,  B82Y20/00 ,  C08J5/22 ,  H01L33/50

摘要： Multi-phase polymer films containing quantum dots (QDs) are described herein. The films have domains of primarily hydrophobic polymer and domains of primarily hydrophilic polymer. QDs, being generally more stable within a hydrophobic matrix, are dispersed primarily within the hydrophobic domains of the films. The hydrophilic domains tend to be effective at excluding oxygen.

公开(公告)号：US11535796B2

公开(公告)日：2022-12-27

申请号：US15931781

申请日：2020-05-14

申请人： SHENZHEN PLANCK INNOVATION TECHNOLOGY CO., LTD

发明人： Xiaowei Sun ,  Kai Wang ,  Fan Fang ,  Hongcheng Yang ,  Bing Xu ,  Yizun Liu ,  Xiang Li

IPC分类号： C09K11/02 ,  C09K11/08 ,  C09K11/62 ,  C09K11/66 ,  C09K11/70 ,  C09K11/88 ,  H01L33/50 ,  B82Y40/00

摘要： Provided are a quantum dot material, a preparation method and use thereof. The quantum material includes a quantum dot, and a first cladding layer and a second cladding clad outside of the quantum dot, wherein the first cladding layer is located between the quantum dot and the second cladding layer. The quantum dot material provided herein has good water and oxygen barrier properties and good stability.

公开(公告)号：US11535761B2

公开(公告)日：2022-12-27

申请号：US16248098

申请日：2019-01-15

申请人： FUJIFILM Corporation

发明人： Naoyoshi Yamada ,  Ryo Satake ,  Natsuru Chikushi ,  Kyohei Arayama

IPC分类号： C09K11/02 ,  C09K11/08 ,  C09K11/56 ,  C09K11/70 ,  H01L33/50 ,  G02F1/017 ,  C09D5/22 ,  F21S2/00 ,  G02B5/20 ,  C09K11/88 ,  G02F1/00 ,  C08F220/18 ,  B82Y30/00 ,  C09D133/08 ,  C09D133/10 ,  F21V8/00

摘要： A quantum dot-containing composition includes a quantum dot, a ligand having coordinating groups, which coordinates to the surface of the quantum dots, and the ligand is represented by Formula I. In Formula I, A is an organic group including one or more coordinating groups selected from an amino group, a carboxy group, a mercapto group, a phosphine group, and a phosphine oxide group, Z is an (n+m+l)-valent organic linking group, R is a group including an alkyl group, an alkenyl group, or an alkynyl group each of which may have a substituent, Y is a group having a polymer chain which has a degree of polymerization of 3 or greater and which includes a polyacrylate skeleton or the like. n and m are each independently 1 or greater, l is 0 or greater, and n+m+l is integer 3 or greater. At least two coordinating groups are included in a molecule.

公开(公告)号：US11512252B2

公开(公告)日：2022-11-29

申请号：US15251643

申请日：2016-08-30

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Garam Park ,  Eun Joo Jang ,  Yongwook Kim ,  Jihyun Min ,  Hyo Sook Jang ,  Shin Ae Jun ,  Taekhoon Kim ,  Yuho Won

IPC分类号： C09K11/88 ,  C09K11/02 ,  C09K11/70 ,  H01L33/50 ,  B82Y20/00

摘要： A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

公开(公告)号：US11499096B2

公开(公告)日：2022-11-15

申请号：US16958294

申请日：2018-12-19

申请人： SHOEI CHEMICAL INC.

发明人： Takafumi Moriyama ,  Ryosuke Motoyoshi

IPC分类号： C09K11/88 ,  C01B19/00 ,  C09K11/08 ,  C09K11/70 ,  B82Y20/00 ,  B82Y40/00

摘要： An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.

公开(公告)号：US11489092B2

公开(公告)日：2022-11-01

申请号：US16668202

申请日：2019-10-30

申请人： LG Display Co., Ltd.

发明人： Kyung-Kook Jang ,  Jong-Kwan Bin ,  Seul-Gi Choi ,  Tae-Yang Lee

IPC分类号： H01L33/50 ,  G02F1/1335 ,  H01L51/50 ,  H01L27/32 ,  H01L51/52 ,  C09K11/06 ,  C09K11/88 ,  C09K11/70 ,  C09K11/56 ,  G02F1/13357 ,  H01L51/00 ,  G02F1/1368 ,  H01L51/56

摘要： A quantum-dot (QD) film, which includes a first QD layer including a first QD; and a first protection layer on the first QD layer and including a first organic compound, wherein the first organic compound includes at least two thiol groups, and a first one of the at least two thiol groups is anchored to the first QD, and an LED package, a QD light emitting diode and a display device including the QD film are provided.

公开(公告)号：US20220298413A1

公开(公告)日：2022-09-22

申请号：US17824225

申请日：2022-05-25

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Tae Gon KIM ,  Shin Ae JUN ,  Taek hoon KIM ,  Hyeyeon YANG ,  Nayoun WON ,  Jongmin Lee ,  Mi Hye LIM

IPC分类号： C09K11/70 ,  C08F220/38 ,  C09K11/02 ,  C09K11/88 ,  H01L33/00 ,  H01L33/50

摘要： Quantum dots and a composite and a display device including the quantum dots. The quantum dots comprise a semiconductor nanocrystal core comprising indium and phosphorous, and optionally zinc, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dots are configured to exhibit a maximum photoluminescence peak in a green light wavelength region, and in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dots, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: (Absfirst−Absvalley)/Absfirst=VD wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak, and wherein the maximum photoluminescence peak of the quantum dots has a full width at half maximum of less than or equal to 40 nanometers.