公开(公告)号：US12232347B2

公开(公告)日：2025-02-18

申请号：US18404975

申请日：2024-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nayoun Won ,  Mi Hye Lim ,  Tae Gon Kim ,  Taekhoon Kim ,  Shang Hyeun Park ,  Shin Ae Jun

IPC: H10K50/115 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88

Abstract: A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.

公开(公告)号：US12187939B2

公开(公告)日：2025-01-07

申请号：US18130453

申请日：2023-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Seon-Yeong Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Yong Wook Kim

IPC: C09K11/70 ,  C09K11/62 ,  C09K11/88 ,  H01L29/12 ,  H10K59/38

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

公开(公告)号：US20240353200A1

公开(公告)日：2024-10-24

申请号：US18302920

申请日：2023-04-19

Applicant: mb-microtec ag

Inventor： Karsten Richter ,  Philipp Michel ,  Christian Schoen

IPC: F41G1/38 ,  C09K11/70 ,  F41G11/00 ,  G02B23/16

CPC classification number: F41G1/383 ,  C09K11/70 ,  F41G11/004 ,  G02B23/16

Abstract: A protective cover for an optical sight of a firearm, with at least one transparent end wall section for protecting either a proximal opening or a distal opening of the optical sight is disclosed. In order to provide a backup sight, it is proposed for the transparent end wall section to have a permanently displayed optical reticle or a part of this reticle.

公开(公告)号：US12122948B2

公开(公告)日：2024-10-22

申请号：US18112694

申请日：2023-02-22

Applicant: Shoei Chemical Inc.

Inventor： James Kundrat ,  David Olmeijer

IPC: C09K11/02 ,  C08K3/30 ,  C09D5/22 ,  C09D183/08 ,  C09K11/70 ,  C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  C08K3/32

CPC classification number: C09K11/025 ,  C09D5/22 ,  C09D183/08 ,  C09K11/02 ,  C09K11/70 ,  C09K11/883 ,  B82Y20/00 ,  B82Y40/00 ,  C08K3/30 ,  C08K3/32 ,  C08K2201/011 ,  Y10S977/774 ,  Y10S977/783 ,  Y10S977/892 ,  Y10S977/95

Abstract: The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures, an aminosilicone polymer, an organic resin, and a cation. The present invention also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.

公开(公告)号：US12031070B2

公开(公告)日：2024-07-09

申请号：US17199613

申请日：2021-03-12

Applicant: Samsung Display Co., Ltd.

Inventor： Jooyeon Ahn ,  Hyeyeon Yang ,  Tae Gon Kim ,  Jongmin Lee ,  Shin Ae Jun

IPC: H01L35/24 ,  C08J5/18 ,  C09K11/06 ,  C09K11/54 ,  C09K11/56 ,  C09K11/62 ,  C09K11/70 ,  H01L51/00 ,  H10K50/115 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: C09K11/565 ,  C08J5/18 ,  C09K11/06 ,  C09K11/54 ,  C09K11/62 ,  C09K11/70 ,  H10K50/115 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08J2300/12

Abstract: A quantum dot, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes a template including a first semiconductor nanocrystal, a quantum well (e.g., quantum well layer) disposed on the template and a shell disposed on the quantum well, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), zinc (Zn), and a chalcogen element wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.

公开(公告)号：US20240172464A1

公开(公告)日：2024-05-23

申请号：US18404975

申请日：2024-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nayoun WON ,  Mi Hye LIM ,  Tae Gon KIM ,  Taekhoon KIM ,  Shang Hyeun PARK ,  Shin Ae JUN

IPC: H10K50/115 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88

CPC classification number: H10K50/115 ,  C09K11/02 ,  C09K11/565 ,  C09K11/703 ,  C09K11/883

Abstract: A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.

公开(公告)号：US20240099044A1

公开(公告)日：2024-03-21

申请号：US18299825

申请日：2023-04-13

Applicant: Samsung Display Co., Ltd.

Inventor： Dongsun Yoo ,  Gyubong Kim ,  Sanghee Yu ,  Sehun Kim ,  Jihye Kim ,  Hoilim Kim ,  Yohan Suh ,  Yunku Jung

IPC: H10K50/115 ,  C09D5/22 ,  C09K11/08 ,  C09K11/70

CPC classification number: H10K50/115 ,  C09D5/22 ,  C09K11/0811 ,  C09K11/70

Abstract: Embodiments provide a mixed solvent for a quantum dot ink composition, wherein the mixed solvent includes at least two solvents, an R1 value of the mixed solvent is greater than or equal to about 7.3 Mpa0.5, an R2 value of the mixed solvent is greater than or equal to about 5.0 Mpa0.5, and a molar volume of the mixed solvent is greater than or equal to about 160 cm3/mol.

公开(公告)号：US11873434B2

公开(公告)日：2024-01-16

申请号：US17608296

申请日：2020-04-30

Applicant: Merck Patent GmbH

Inventor： Inbal Davidi ,  Amir Holtzman ,  Alex Irzh ,  David Mocatta ,  Elizaveta Kossoy ,  Sanaa Khalil ,  Denis Glozman

IPC: C09K11/70 ,  C09K11/08 ,  C09K11/88 ,  C09K11/74 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/703 ,  C09K11/0883 ,  C09K11/7492 ,  C09K11/883 ,  B82Y20/00 ,  B82Y40/00

Abstract: The present invention relates to a method for synthesizing a semiconducting nanosized material.

公开(公告)号：US11867988B2

公开(公告)日：2024-01-09

申请号：US17409153

申请日：2021-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd ,  SAMSUNG SDI CO., LTD.

Inventor： Deukseok Chung ,  Shin Ae Jun ,  Tae Won Jeong ,  Yong Seok Han

IPC: G02F1/017 ,  G02F1/1362 ,  G02F1/1335 ,  G02F1/13357 ,  G03F7/00 ,  G03F7/033 ,  G03F7/004 ,  C09K11/62 ,  C09K11/70 ,  C09K11/02 ,  B32B37/06 ,  H01L31/0352

CPC classification number: G02F1/017 ,  C09K11/025 ,  C09K11/623 ,  C09K11/70 ,  G02F1/133533 ,  G02F1/133617 ,  G02F1/136286 ,  G03F7/0007 ,  G03F7/0047 ,  G03F7/033 ,  B32B37/06 ,  B32B2457/20 ,  B32B2457/202 ,  B32B2457/206 ,  C09K2323/00 ,  C09K2323/03 ,  G02F1/01791 ,  G02F2201/50 ,  H01L31/035209 ,  H01L31/035218

Abstract: A layered structure including a transparent substrate; a photoluminescent layer disposed on the transparent substrate and a pattern of a quantum dot polymer composite; and a capping layer disposed on the photoluminescent layer and including an inorganic material, a method of producing the same, a liquid crystal display including the same. The quantum dot polymer composite includes a polymer matrix; and a plurality of quantum dots in the polymer matrix, the pattern of the quantum dot polymer composite includes at least one repeating section and the repeating section includes a first section configured to emit light of a first peak wavelength, the inorganic material is disposed on at least a portion of a surface of the repeating section, and the inorganic material includes a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof.

公开(公告)号：US11859116B2

公开(公告)日：2024-01-02

申请号：US17356463

申请日：2021-06-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yunku Jung ,  Hyekyoung Choi ,  Sungwoon Kim ,  Jaekook Ha

IPC: C09K11/62 ,  C09K11/56 ,  C09K11/88 ,  C09K11/70 ,  C09K11/02 ,  C09K11/08 ,  B82Y20/00 ,  B82Y40/00 ,  H10K50/115

CPC classification number: C09K11/626 ,  C09K11/025 ,  C09K11/0883 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  B82Y20/00 ,  B82Y40/00 ,  H10K50/115

Abstract: A quantum dot composition may include: a first solvent; a second solvent different from the first solvent; first quantum dots including a hole-transporting ligand; and second quantum dots including an electron-transporting ligand, wherein the first solvent and the second solvent are miscible solvents having different boiling points from each other, a degree of dispersion of the first quantum dots is greater in the first solvent than in the second solvent, and a degree of dispersion of the second quantum dots is greater in the second solvent than in the first solvent.