Invention Grant
- Patent Title: Composition for etching
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Application No.: US17087635Application Date: 2020-11-03
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Publication No.: US11365352B2Publication Date: 2022-06-21
- Inventor: Jin Uk Lee , Jae Wan Park , Jung Hun Lim
- Applicant: SOULBRAIN CO., LTD.
- Applicant Address: KR Gyeonggi-do
- Assignee: SOULBRAIN CO., LTD.
- Current Assignee: SOULBRAIN CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Agent Jongkook Park
- Priority: KR10-2014-0090660 20140717,KR10-2014-0090661 20140717,KR10-2014-0090662 20140717,KR10-2014-0090663 20140717,KR10-2015-0078400 20150603
- Main IPC: C09K13/06
- IPC: C09K13/06 ; H01L21/02 ; H01L29/66 ; H01L27/11556 ; H01L21/311

Abstract:
The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
Public/Granted literature
- US20210054279A1 COMPOSITION FOR ETCHING Public/Granted day:2021-02-25
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