Invention Grant
- Patent Title: Magnetoresistive devices and methods for forming the same
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Application No.: US16752190Application Date: 2020-01-24
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Publication No.: US11366182B2Publication Date: 2022-06-21
- Inventor: Chien-Hsun Wu , Cheng-Ping Chang , Chien-Hui Li , Tai-I Yang , Yung-Hsiang Chen
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: G01R33/09
- IPC: G01R33/09 ; H01L43/02 ; H01L43/08 ; H01L43/12
Abstract:
A magnetoresistive device includes a magnetoresistor disposed over a substrate, a stress release structure covering a side surface of the magnetoresistor, an electrical connection structure disposed over the magnetoresistor, and a passivation layer disposed over the electrical connection structure and the stress release structure.
Public/Granted literature
- US20210231753A1 MAGNETORESISTIVE DEVICES AND METHODS FOR FORMING THE SAME Public/Granted day:2021-07-29
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