Invention Grant
- Patent Title: Atomic layer deposition process for fabricating dielectric metasurfaces for wavelengths in the visible spectrum
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Application No.: US15778208Application Date: 2016-11-23
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Publication No.: US11366296B2Publication Date: 2022-06-21
- Inventor: Robert C. Devlin , Mohammadreza Khorasaninejad , Federico Capasso , Hongkun Park , Alexander Arthur High
- Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
- Applicant Address: US MA Cambridge
- Assignee: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
- Current Assignee: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
- Current Assignee Address: US MA Cambridge
- Agency: Foley & Lardner LLP
- International Application: PCT/US2016/063617 WO 20161123
- International Announcement: WO2017/091738 WO 20170601
- Main IPC: G02B1/02
- IPC: G02B1/02 ; G02B13/14 ; G02B1/00 ; H01L31/02 ; G03F7/00 ; G03F7/40 ; C23C16/56 ; C23C16/455 ; C23C16/04

Abstract:
A method of fabricating a visible spectrum optical component includes: providing a substrate; forming a resist layer over a surface of the substrate; patterning the resist layer to form a patterned resist layer defining openings exposing portions of the surface of the substrate; performing deposition to form a dielectric film over the patterned resist layer and over the exposed portions of the surface of the substrate, wherein a top surface of the dielectric film is above a top surface of the patterned resist layer; removing a top portion of the dielectric film to expose the top surface of the patterned resist layer and top surfaces of dielectric units within the openings of the patterned resist layer; and removing the patterned resist layer to retain the dielectric units over the substrate.
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