Invention Grant
- Patent Title: Radiation-emitting semiconductor chip with overlapping contact layers
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Application No.: US16216067Application Date: 2018-12-11
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Publication No.: US11367808B2Publication Date: 2022-06-21
- Inventor: Fabian Kopp , Franz Eberhard , Björn Muermann , Attila Molnar
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: DLA Piper LLP (US)
- Priority: DE102017129783.9 20171213
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/24 ; H01L33/46 ; H01L33/20

Abstract:
A radiation-emitting semiconductor chip includes a semiconductor body; a first contact layer having a first contact surface for external electrical contacting of the semiconductor chip and a first contact web structure connected to the first contact surface, wherein the first contact web structure is a region of the first contact layer that, compared to the first contact surface, has a comparatively small extent at least in a lateral direction; a second contact layer, wherein first and second contact web structures overlap in places in plan view of the semiconductor chip; a current distribution layer; and an insulation layer having a plurality of openings into which the current distribution layer extends.
Public/Granted literature
- US20190181299A1 RADIATION-EMITTING SEMICONDUCTOR CHIP Public/Granted day:2019-06-13
Information query
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