公开(公告)号：US11367808B2

公开(公告)日：2022-06-21

申请号：US16216067

申请日：2018-12-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Fabian Kopp ,  Franz Eberhard ,  Björn Muermann ,  Attila Molnar

IPC: H01L33/38 ,  H01L33/24 ,  H01L33/46 ,  H01L33/20

Abstract: A radiation-emitting semiconductor chip includes a semiconductor body; a first contact layer having a first contact surface for external electrical contacting of the semiconductor chip and a first contact web structure connected to the first contact surface, wherein the first contact web structure is a region of the first contact layer that, compared to the first contact surface, has a comparatively small extent at least in a lateral direction; a second contact layer, wherein first and second contact web structures overlap in places in plan view of the semiconductor chip; a current distribution layer; and an insulation layer having a plurality of openings into which the current distribution layer extends.

公开(公告)号：US09859463B2

公开(公告)日：2018-01-02

申请号：US15310558

申请日：2015-05-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Fabian Kopp ,  Christian Eichinger ,  Björn Muermann

IPC: H01L33/14 ,  H01L33/62 ,  H01L33/22

CPC classification number: H01L33/14 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

Abstract: An optoelectronic semiconductor device has a semiconductor body including a semiconductor layer sequence with an active region that generates radiation, a semiconductor layer and a further semiconductor layer, wherein the active region is arranged between the semiconductor layer and the further semiconductor layer, a current spreading layer is arranged on a radiation exit face of the semiconductor body, the current spreading layer connects electrically conductively with a contact structure for external electrical contacting of the semiconductor layer, in a plan view of the semiconductor device the current spreading layer adjoins the semiconductor layer in a connection region, and the current spreading layer includes a patterning with a plurality of recesses through which radiation exits the semiconductor device during operation.

公开(公告)号：US20190181299A1

公开(公告)日：2019-06-13

申请号：US16216067

申请日：2018-12-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Fabian Kopp ,  Franz Eberhard ,  Björn Muermann ,  Attila Molnar

IPC: H01L33/38 ,  H01L33/24 ,  H01L33/46

Abstract: A radiation-emitting semiconductor chip includes a semiconductor body having an active region that generates radiation; a first contact layer having a first contact surface and a first contact web structure connected to the first contact surface; a second contact layer having a second contact surface and a second contact web structure connected to the second contact surface, wherein the first contact web structure and the second contact web structure overlap in places in plan view of the semiconductor chip; a current distribution layer through which the first semiconductor layer electrically conductively connects to the first contact layer; and an insulation layer containing a dielectric material, wherein the insulation layer is arranged between the first semiconductor layer and the current distribution layer and has a plurality of openings into which the current distribution layer extends, and a diameter of the openings is 1 μm to 20 μm.

公开(公告)号：US20170092808A1

公开(公告)日：2017-03-30

申请号：US15310558

申请日：2015-05-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Fabian Kopp ,  Christian Eichinger ,  Björn Muermann

IPC: H01L33/14 ,  H01L33/22 ,  H01L33/62

CPC classification number: H01L33/14 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

Abstract: An optoelectronic semiconductor device has a semiconductor body including a semiconductor layer sequence with an active region that generates radiation, a semiconductor layer and a further semiconductor layer, wherein the active region is arranged between the semiconductor layer and the further semiconductor layer, a current spreading layer is arranged on a radiation exit face of the semiconductor body, the current spreading layer connects electrically conductively with a contact structure for external electrical contacting of the semiconductor layer, in a plan view of the semiconductor device the current spreading layer adjoins the semiconductor layer in a connection region, and the current spreading layer includes a patterning with a plurality of recesses through which radiation exits the semiconductor device during operation.