Invention Grant
- Patent Title: Elastic wave device, high-frequency front end circuit, and communication apparatus
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Application No.: US15724569Application Date: 2017-10-04
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Publication No.: US11367829B2Publication Date: 2022-06-21
- Inventor: Mari Saji
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Nagaokakyo
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Nagaokakyo
- Agency: Keating & Bennett, LLP
- Priority: JPJP2016-245758 20161219
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H01L41/187 ; H01L41/277 ; H03H9/25 ; H01L41/08 ; H01L41/253 ; C30B29/30 ; H03H9/145

Abstract:
An elastic wave device includes a piezoelectric substrate, an IDT electrode including a first electrode layer located on the piezoelectric substrate and including one of Mo and W as a main component and a second electrode layer laminated on the first electrode layer and including Cu as a main component, and a dielectric film located on the piezoelectric substrate and covering the IDT electrode. The piezoelectric substrate is made of lithium niobate. The dielectric film is made of silicon oxide. The elastic wave device utilizes Rayleigh waves propagating along the piezoelectric substrate.
Public/Granted literature
- US20180175282A1 ELASTIC WAVE DEVICE, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS Public/Granted day:2018-06-21
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