Invention Grant
- Patent Title: Method of forming oxide film, method of manufacturing semiconductor device, and film forming apparatus configured to form oxide film
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Application No.: US16892793Application Date: 2020-06-04
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Publication No.: US11371161B2Publication Date: 2022-06-28
- Inventor: Tatsuji Nagaoka , Hiroyuki Nishinaka , Masahiro Yoshimoto
- Applicant: DENSO CORPORATION , NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
- Applicant Address: JP Kariya; JP Kyoto
- Assignee: DENSO CORPORATION,NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
- Current Assignee: DENSO CORPORATION,NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
- Current Assignee Address: JP Kariya; JP Kyoto
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2019-105350 20190605
- Main IPC: C30B19/06
- IPC: C30B19/06 ; C30B19/10 ; H01L21/02 ; C30B29/16
Abstract:
A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate while heating the substrate at a first temperature so as to epitaxially grow the oxide film on the surface; and bringing the oxide film into contact with a fluid comprising oxygen atoms while heating the oxide film at a second temperature higher than the first temperature after the epitaxial growth of the oxide film.
Information query
