公开(公告)号：US12230500B2

公开(公告)日：2025-02-18

申请号：US17917721

申请日：2021-04-07

Applicant: TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

Inventor： Quang Tu Thieu ,  Kohei Sasaki

IPC: C30B25/14 ,  C30B25/20 ,  C30B29/16 ,  H01L21/02 ,  H01L29/24 ,  H01L29/872

Abstract: A method for manufacturing a semiconductor film includes placing a semiconductor substrate including a β-Ga2O3-based single crystal in a reaction chamber of an HVPE apparatus. When the semiconductor substrate is placed so that the growth base surface faces upward, an inlet for a dopant-including gas into the space is positioned higher than an inlet for an oxygen-including gas into the space and an inlet for a Ga chloride gas into the space is positioned higher than the inlet for the dopant-including gas into the space. When the semiconductor substrate is placed so that the growth base surface faces downward, the inlet for the dopant-including gas into the space is positioned higher than the inlet for the Ga chloride gas into the space and the inlet for the oxygen-including gas into the space is positioned higher than the inlet for the dopant-including gas into the space.

公开(公告)号：US20250034752A1

公开(公告)日：2025-01-30

申请号：US18894708

申请日：2024-09-24

Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM ,  AGC Inc.

Inventor： Masaru HORI ,  Osamu Oda ,  Arun Kumar Dhasiyan ,  Atsushi Hayashi ,  Nobutaka Aomine

IPC: C30B25/08 ,  C30B25/10 ,  C30B25/20 ,  C30B29/16

Abstract: A gallium oxide film production apparatus includes: a reaction chamber; a substrate disposition portion located in the reaction chamber and configured to dispose a substrate for growing a gallium oxide; a gallium element supply device configured to supply a gallium element to the substrate disposition portion; an oxygen element supply device configured to supply oxygen constituent particles to the substrate disposition portion; and a mixed gas supply device configured to supply a mixed gas containing oxygen and ozone to the oxygen element supply device. The oxygen element supply device includes a plasma generation unit configured to generate plasma from the mixed gas.

公开(公告)号：US20250011970A1

公开(公告)日：2025-01-09

申请号：US18705632

申请日：2023-01-26

Applicant: Gaianixx Inc.

Inventor： Takeshi Kijima

IPC: C30B29/68 ,  C30B23/02 ,  C30B25/18 ,  C30B29/02 ,  C30B29/16 ,  C30B29/38

Abstract: Provided are a laminated structure including an epitaxial film having good adhesion and crystallinity, an electronic device, an electronic apparatus, and a manufacturing method that can provide the same in an industrially advantageous manner.
In a method for manufacturing a laminated structure in which an epitaxial layer is laminated on a crystal substrate with at least a compound film interposed therebetween, the lamination is performed by a step of providing a compound element supply sacrificial layer containing a compound element on the crystal substrate and a step of forming the epitaxial layer using the compound element of the compound element supply sacrificial layer.

公开(公告)号：US12180585B2

公开(公告)日：2024-12-31

申请号：US17766467

申请日：2020-07-15

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Hiroshi Hashigami

IPC: C23C16/44 ,  C01G15/00 ,  C23C16/40 ,  C23C16/448 ,  C30B25/14 ,  C30B29/16

Abstract: A method for producing a gallium precursor, including, a step of preparing a solvent comprising an aqueous solution containing an acid and/or an alkali, a step of immersing gallium in the solvent, a step of making the gallium immersed in the solvent fine, and a step of dissolving the fined gallium. This provides a method for producing a gallium precursor with high quality and highly productive.

公开(公告)号：US20240263338A1

公开(公告)日：2024-08-08

申请号：US18355469

申请日：2023-07-20

Applicant: Nankai University

Inventor： Fangyi CHENG ,  Jinhan LI ,  Haixia LI ,  Huan WANG ,  Zhenhua YAN ,  Jun CHEN

IPC: C30B7/14 ,  C30B29/16 ,  C30B29/66

CPC classification number: C30B7/14 ,  C30B29/16 ,  C30B29/66

Abstract: Disclosed are a graded tip cuprous oxide single crystal material and a preparation method and application thereof. A first-level structure of the material is a regular octahedron, a second-level structure of the material is pyramid-shaped tips evenly distributed on the first-level structure, a size of the tip ranges from 40 nm to 180 nm, and a surface coverage degree ranges from 10% to 100%. The preparation method thereof comprises the following steps of: separating out a seed crystal from a mixed solution of copper soluble salt, concentrated brine, and strong alkali in advance to obtain a turbid liquid; and adding a reducing agent into the turbid liquid for seed-induced growth, adding excessive distilled water to dissolve the seed, and filtering, washing and drying to obtain the graded tip cuprous oxide single crystal material.

公开(公告)号：US12049696B2

公开(公告)日：2024-07-30

申请号：US17344854

申请日：2021-06-10

Applicant: Applied Materials, Inc.

Inventor： Xiaowei Wu ,  Jennifer Y. Sun ,  Michael R. Rice

IPC: C23C14/00 ,  C23C14/08 ,  C23C16/40 ,  C23C16/455 ,  C30B29/16 ,  C30B29/68 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  H01L23/29 ,  H10N60/85

CPC classification number: C23C16/405 ,  C23C14/083 ,  C23C16/403 ,  C23C16/45542 ,  C30B29/16 ,  C30B29/68 ,  H01J37/32477 ,  H01L21/02192 ,  H01L21/0228 ,  H01L21/67161 ,  H01L23/291 ,  H10N60/855

Abstract: A lid or other chamber component for a process chamber comprises a) at least one surface comprising a first ceramic material, wherein the first ceramic material comprises Y3Al5O12 and b) an internal region beneath the at least one surface comprising a second ceramic material, wherein the second ceramic material comprises a combination of Al2O3 and ZrO2.

公开(公告)号：US20240250115A1

公开(公告)日：2024-07-25

申请号：US18287939

申请日：2022-03-30

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Takenori WATABE ,  Hiroshi HASHIGAMI ,  Takahiro SAKATSUME

IPC: H01L29/04 ,  C30B25/16 ,  C30B25/18 ,  C30B29/16 ,  H01L21/02

CPC classification number: H01L29/04 ,  C30B25/16 ,  C30B25/18 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02565 ,  H01L21/0262

Abstract: A laminated structure including, a ground substrate with a crystalline oxide film containing gallium oxide as a main component and a root-mean-square of a roughness on a surface of the crystalline oxide film is 0.2 μm or less. A diameter of the ground substrate is 50 mm or more and TTV of the ground substrate is 30 μm or less.

公开(公告)号：US12009206B2

公开(公告)日：2024-06-11

申请号：US18112750

申请日：2023-02-22

Applicant: National University Corporation Nagoya University ,  TOYODA GOSEI CO., LTD

Inventor： Shugo Nitta ,  Yoshio Honda ,  Kentaro Nagamatsu ,  Hiroshi Amano ,  Naoki Fujimoto

IPC: C30B35/00 ,  C30B29/16 ,  C30B29/36 ,  C30B29/38 ,  H01L21/02 ,  C30B23/02 ,  C30B23/06

CPC classification number: H01L21/02518 ,  C30B29/16 ,  C30B29/36 ,  C30B29/38 ,  C30B35/007 ,  C30B23/02 ,  C30B23/06 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T117/00

Abstract: A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

公开(公告)号：US11982016B2

公开(公告)日：2024-05-14

申请号：US17471395

申请日：2021-09-10

Applicant: TAMURA CORPORATION ,  NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY

Inventor： Ken Goto ,  Kohei Sasaki ,  Akinori Koukitu ,  Yoshinao Kumagai ,  Hisashi Murakami

IPC: C30B25/16 ,  C23C16/40 ,  C23C16/448 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02 ,  H01L29/04 ,  H01L29/24

CPC classification number: C30B25/165 ,  C23C16/40 ,  C23C16/4488 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/0259 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/04 ,  H01L29/24

Abstract: As one embodiment, the present invention provides a method for growing a β-Ga2O3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C.

公开(公告)号：US11948795B2

公开(公告)日：2024-04-02

申请号：US17052889

申请日：2019-12-09

Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Myung Mo Sung ,  Lynn Lee ,  Jin Won Jung ,  Jong Chan Kim

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C30B25/02 ,  C30B29/16 ,  H01L21/30 ,  H01L29/04 ,  H01L29/20 ,  H01L29/22 ,  H01L29/786 ,  H01L33/12 ,  H01L33/16 ,  H01L33/28 ,  H01L33/32

CPC classification number: H01L21/0262 ,  C23C16/407 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02609 ,  H01L21/30 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/78696 ,  H01L33/12 ,  H01L33/16 ,  H01L33/28 ,  H01L33/32

Abstract: Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.