Invention Grant
- Patent Title: Ion beam etching system
-
Application No.: US16631837Application Date: 2018-06-28
-
Publication No.: US11373842B2Publication Date: 2022-06-28
- Inventor: Na Li , Dongdong Hu , Kaidong Xu
- Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD
- Applicant Address: CN Xuzhou
- Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTD
- Current Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTD
- Current Assignee Address: CN Xuzhou
- Agency: Bayramoglu Law Offices LLC
- Priority: CN201710680517.3 20170810
- International Application: PCT/CN2018/093270 WO 20180628
- International Announcement: WO2019/029291 WO 20190214
- Main IPC: H01J37/305
- IPC: H01J37/305 ; H01J37/04 ; H01L21/67

Abstract:
An ion beam etching system includes an etching cavity, an etching electrode, and an electrode displacement apparatus used for enabling the electrode to change a working position in the etching cavity. The electrode displacement apparatus includes a dynamic sealing mechanism, a dynamic electrode balance counterweight mechanism, an electrode displacement transmission mechanism, and an electrode displacement driving mechanism. The etching cavity includes a cavity and a cavity cover connected with the cavity. The cavity is of an irregular shape. The cavity includes a partial cylindrical body, a side plate, a tapered transition portion, and a bottom plate. The partial cylindrical body is laterally sealed by means of the side plate. The bottom plate is connected to an end of the partial cylindrical body by means of the tapered transition portion and seals the end of the partial cylindrical body.
Public/Granted literature
- US20200161088A1 ION BEAM ETCHING SYSTEM Public/Granted day:2020-05-21
Information query