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公开(公告)号：US12009188B2
公开(公告)日：2024-06-11
申请号：US17626496
申请日：2020-02-28
Applicant: JIANGSU LEUVEN INSTRUMENTS CO., LTD
Inventor： Haiyang Liu , Dongdong Hu , Xiaobo Liu , Na Li , Shiran Cheng , Song Guo , Zhihao Wu , Kaidong Xu
CPC classification number: H01J37/32862 , B08B9/00 , B08B13/00 , H01J2237/334
Abstract: The present invention provides a rotatable faraday cleaning apparatus and a plasma processing system, said apparatus comprising a cavity cover, a motor, an eccentric wheel, a long-petalled assembly, a coupling window, a gas intake nozzle, a connecting rod, a short-petalled assembly, a first sector-shaped conductor, and a second sector-shaped conductor; the cavity cover is assembled on a reactor cavity main body, the coupling window is mounted on the cavity cover, the gas intake nozzle is provided on the coupling window, the first sector-shaped conductor is assembled on the gas intake nozzle, the second sector-shaped conductor is assembled on the gas intake nozzle, the long-petalled assembly is assembled on the gas intake nozzle, the short-petalled assembly is assembled on the gas intake nozzle, the connecting rod is assembled on the long-petalled assembly, the eccentric wheel is assembled on the connecting rod, and the motor is mounted on the eccentric wheel.
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公开(公告)号：US11877519B2
公开(公告)日：2024-01-16
申请号：US17289756
申请日：2019-05-23
Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD
Inventor： Zhongyuan Jiang , Ziming Liu , Juebin Wang , Dongchen Che , Hushan Cui , Dongdong Hu , Lu Chen , Huiqun Ren , Zhiwen Zou , Kaidong Xu
Abstract: A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (15), a vacuum transition chamber (14), a reactive ion plasma etching chamber (10), an ion beam etching chamber (11), a film coating chamber (12), and a vacuum transport chamber (13). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (102); then, ion beam etching is performed to etch into a fixed layer (101) and stopped near a bottom electrode metal layer (100), leaving only a small amount of the fixed layer (101); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (100); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.
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公开(公告)号：US11955323B2
公开(公告)日：2024-04-09
申请号：US17628224
申请日：2020-02-29
Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD
Inventor： Na Li , Dongdong Hu , Xiaobo Liu , Haiyang Liu , Shiran Cheng , Song Guo , Zhihao Wu , Kaidong Xu
IPC: H01J37/32
CPC classification number: H01J37/32862 , H01J37/3244 , H01J2237/335
Abstract: The present invention provides a device for blocking plasma backflow in a process chamber to protect an air inlet structure, comprising an air inlet nozzle tightly connected to an air inlet flange. The inner cavity of the air inlet nozzle is provided with an air inlet guide body, wherein the air inlet guide body has an upper structure, a middle structure, and a lower structure, the upper, middle, and lower structures are an integrated structure, the upper, middle, and lower structures are all cylindrical, the cross-sectional diameter of the upper structure is smaller than that of the middle structure, a gas gathering area is arranged between the middle structure and the lower structure, and the middle structure and the lower structure are connected by the gas gathering area.
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公开(公告)号：US11963455B2
公开(公告)日：2024-04-16
申请号：US17265227
申请日：2019-05-21
Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD
Inventor： Kaidong Xu , Dongchen Che , Dongdong Hu , Lu Chen
IPC: H10N50/01
CPC classification number: H10N50/01
Abstract: There is provided a method for etching magnetic tunnel junction, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a coating chamber, and a vacuum transmission chamber. The method completes the etching of the magnetic tunnel junction in the reactive ion plasma etching chamber, performs ion beam cleaning in the ion beam etching chamber, and performs coating protection in the coating chamber. The transmission among the respective chambers is all in a vacuum state. The invention can overcome the bottleneck in the production of high-density small devices, while greatly improving the yield, reliability and production efficiency of the devices.
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公开(公告)号：US11735400B2
公开(公告)日：2023-08-22
申请号：US17627129
申请日：2020-02-26
Applicant: JIANGSU LEUVEN INSTRUMENTS CO., LTD
Inventor： Haiyang Liu , Dongdong Hu , Xiaobo Liu , Na Li , Shiran Cheng , Song Guo , Zhihao Wu , Kaidong Xu
IPC: H01J37/32
CPC classification number: H01J37/32862 , H01J2237/3341
Abstract: Provided are a faraday cleaning device and a plasma processing system, the device comprising a reaction chamber, a bias electrode, a wafer, a chamber cover, a coupling window, an air inlet nozzle, a vertical coil, and a faraday layer, wherein the coupling window is installed at the upper end face of the chamber cover, the chamber cover is installed at the upper end face of the reaction chamber, the bias electrode is assembled inside the reaction chamber, the wafer is installed at the upper end face of the bias electrode, the air inlet nozzle is assembled inside the coupling window, the faraday layer is installed at the upper end face of the coupling window, and the vertical coil is assembled at the upper end face of the faraday layer.
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Patent Agency Ranking
公开(公告)号：US12112923B2
公开(公告)日：2024-10-08
申请号：US17292796
申请日：2019-09-18
Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD
Inventor： Na Li , Shiran Cheng , Haiyang Liu , Zhaochao Chen , Yonggang Hou , Chengyi Wang , Dongdong Hu , Kaidong Xu
IPC: H01J37/32
CPC classification number: H01J37/32495 , H01J2237/334
Abstract: A reaction chamber lining including an annular side wall and a flange arranged on an upper portion of the side wall. An end face of the flange extends from the side wall in a radial direction, an outer edge of the flange extends in the radial direction to form fixing flanging parts, and a hole is in each of the fixing flanging parts. The side wall includes a rectangular slot, and a position of the rectangular slot corresponds to a position of a robotic arm access hole in a side wall of a reaction chamber. The side wall includes through holes and honeycomb-shaped apertures. A face joined to the bottom of the side wall includes a disc extending inwards in the radial direction, an extending end of the disc is fitted with an outer edge of an electrode assembly. A plurality of circles of slotted holes are in the disc.
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公开(公告)号：US11837439B2
公开(公告)日：2023-12-05
申请号：US17628225
申请日：2020-02-26
Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD
Inventor： Haiyang Liu , Xiaobo Liu , Xuedong Li , Na Li , Shiran Cheng , Song Guo , Dongdong Hu , Kaidong Xu
IPC: H01J37/32
CPC classification number: H01J37/321 , H01J37/32183 , H01J37/32477 , H01J37/32651 , H01J37/32862
Abstract: Disclosed in the present application is an inductively coupled plasma treatment system. Said system switches the connection between a radio frequency coil and a faraday shielding device by means of a switch switching radio frequency power. When a radio frequency power supply is connected to the radio frequency coil by means of a matched network, the radio frequency power is coupled into the radio frequency coil to perform plasma treatment process. When a radio frequency power supply is connected to a faraday shielding device by means of a matched network, the radio frequency power is coupled into the faraday shielding device to perform cleaning process on a dielectric window and an inner wall of a plasma treatment cavity.
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公开(公告)号：US12063866B2
公开(公告)日：2024-08-13
申请号：US17289753
申请日：2019-05-23
Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD
Inventor： Juebin Wang , Zhongyuan Jiang , Ziming Liu , Dongchen Che , Hushan Cui , Dongdong Hu , Lu Chen , Dajian Han , Zhiwen Zou , Kaidong Xu
CPC classification number: H10N50/01 , G11C11/161 , H01L21/3065 , H10B61/00 , H10N50/10 , H10N50/80 , H10N50/85
Abstract: A multilayer magnetic tunnel junction etching method and an MRAM device. A wafer is processed according to particular steps without interrupting vacuum. A reactive ion plasma etching chamber (10) and an ion beam etching chamber (11) are used separately at least one time. The processing of a multilayer magnetic tunnel junction is always in a vacuum environment, thereby avoiding the impact of an external environment on etching. By means of the process of combining etching and cleaning, a device structure maintains good steepness, and the metal contamination and damage of a magnetic tunnel junction film structure are significantly decreased, thereby greatly increasing the performance and reliability of a device. In addition, use of both the ion beam etching chamber (11) and the reactive ion plasma etching chamber (10) solves the technical problem of an existing single etching method, and increases production efficiency and etching process precision.
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公开(公告)号：US12035633B2
公开(公告)日：2024-07-09
申请号：US17289755
申请日：2019-05-23
Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD
Inventor： Ziming Liu , Juebin Wang , Zhongyuan Jiang , Dongchen Che , Hushan Cui , Dongdong Hu , Lu Chen , Hongyue Sun , Dajian Han , Kaidong Xu
Abstract: Disclosed is method for etching a magnetic tunnel junction. An etching apparatus used comprises a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a film coating chamber and a vacuum transport chamber. The method comprises multiple performances of the steps of reactive ion and plasma etching, ion beam etching and film coating. Multiple performances of entry into and exit from the chambers are required during the process, and the delivery between the chambers is performed under vacuum.
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公开(公告)号：US12027345B2
公开(公告)日：2024-07-02
申请号：US17294469
申请日：2019-09-18
Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD
Inventor： Xiaobo Liu , Xuedong Li , Yong Qiu , Na Li , Yonggang Hou , Dongdong Hu , Lu Chen , Kaidong Xu
CPC classification number: H01J37/32183 , H01L22/26 , H01J37/32642 , H01J2237/2007 , H01J2237/3343
Abstract: An etching uniformity regulating device and method. The device comprises an inductor and a capacitor connected in parallel. One end of the etching uniformity regulating device is connected to a built-in ring located at the edge of an electrostatic chuck of an etching machine, and the other end is grounded. The purpose of controlling the edge electric field is achieved by regulating a capacitance of the capacitor, so as to regulate the etching rate of the edge, thereby achieving etching uniformity.
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