The disclosed technology generally relates to a memory selector and to a memory device including the memory selector, and more particularly to the memory selector and the memory device implemented in a crossbar memory architecture. In one aspect, a memory selector for a crossbar memory architecture comprises a metal bottom electrode, a metal top electrode and an intermediate layer stack between and in contact with the metal top and bottom electrodes. A bottom Schottky barrier having a bottom Schottky barrier height (ΦB) is formed at the interface between the metal bottom electrode and the intermediate layer stack. A top Schottky barrier having a top Schottky barrier height (ΦT) is formed at the interface between the metal top electrode and the intermediate layer stack. The disclosed technology further relates to a random access memory (RAM) and a memory cell including the memory selector.