Invention Grant
- Patent Title: Apparatus associated with analysis of thin film layer and manufacturing method thereof
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Application No.: US16096083Application Date: 2017-04-25
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Publication No.: US11385049B2Publication Date: 2022-07-12
- Inventor: Riikka Puurunen , Feng Gao
- Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY
- Applicant Address: FI Espoo
- Assignee: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY
- Current Assignee: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY
- Current Assignee Address: FI Espoo
- Agency: Carter, DeLuca & Farrell LLP
- Agent Robert P. Michal, Esq.
- Priority: FI20165361 20160426
- International Application: PCT/FI2017/050312 WO 20170425
- International Announcement: WO2017/187016 WO 20171102
- Main IPC: G01B21/08
- IPC: G01B21/08 ; G01B21/00 ; C23C16/52 ; C23C16/04

Abstract:
An apparatus associated with an analysis of a thin film layer comprises two layer structures (100, 102) with a cavity (104) therebetween, and an opening (110) through one of the layer structures (102) to the cavity (104), the cavity (104) being configured to receive, through the opening (110), material used to form a thin film layer (900) inside the cavity (104). At least one of the two layer structures (100, 102) comprises at least one positional indicator (108) for an analysis associated with the thin film layer (900).
Public/Granted literature
- US20190120620A1 APPARATUS ASSOCIATED WITH ANALYSIS OF THIN FILM LAYER AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-04-25
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