Invention Grant
- Patent Title: Memory device interface and method
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Application No.: US16797618Application Date: 2020-02-21
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Publication No.: US11386004B2Publication Date: 2022-07-12
- Inventor: Brent Keeth , Owen Fay , Chan H. Yoo , Roy E. Greeff , Matthew B. Leslie
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G06F12/06 ; G11C29/12 ; G11C11/4093 ; H01L25/18 ; H01L25/065 ; G06F12/02

Abstract:
Memory devices, systems and methods include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some configurations, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected memory devices, systems and methods include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.
Public/Granted literature
- US20200272560A1 MEMORY DEVICE INTERFACE AND METHOD Public/Granted day:2020-08-27
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