Invention Grant
- Patent Title: Detecting defects in a semiconductor specimen
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Application No.: US16425859Application Date: 2019-05-29
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Publication No.: US11386539B2Publication Date: 2022-07-12
- Inventor: Elad Cohen , Yuri Feigin , Lior Katz , Eyal Neistein
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel Ltd.
- Current Assignee: Applied Materials Israel Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: G06T7/00
- IPC: G06T7/00 ; H01L21/67

Abstract:
A system and method for specimen examination, the system comprising a processing and memory circuitry (PMC) for: obtaining an image of at least a part of a specimen, the image acquired by an examination tool; receiving one or more characteristics of a defect of interest and a location of interest associated therewith; modifying within the image one or more pixels corresponding to the location of interest, wherein the modification is provided in accordance with a characteristic of the defect of interest, thereby planting the defect of interest into the image; processing the modified image to detect locations of potential defects of the specimen in accordance with a detection recipe; and determining whether the detected locations include the location of interest. Subject to the location of interest not being detected, modifying the detection recipe to enable detecting the planted defect of interest at the location of interest.
Public/Granted literature
- US20200380662A1 DETECTING DEFECTS IN A SEMICONDUCTOR SPECIMEN Public/Granted day:2020-12-03
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