Systems, methods, and apparatus including computer-readable mediums for determining read voltages for memory systems with machine learning (ML) are provided. In one aspect, a memory system includes a memory and a memory controller configured to: obtain a first reading output of memory data using a first read voltage corresponding to a first set of parameters associated with the memory data; if the first reading output fails to pass an Error Correction Code (ECC) test, obtain a second reading output of the memory data using a second read voltage corresponding to a second set of parameters associated with the memory data and including the first set of parameters, the second read voltage being generated using at least one ML algorithm based on the second set of parameters; and if the second reading output passes the ECC test, output the second reading output as a target reading output of the memory data.