MANAGING DATA SECURITY IN STORAGE DEVICES

    公开(公告)号:US20250165407A1

    公开(公告)日:2025-05-22

    申请号:US18517270

    申请日:2023-11-22

    Abstract: Systems, devices, methods, and circuits for managing data security in storage devices. In one aspect, a storage device includes at least one memory device and a controller coupled to the at least one memory device. The controller is configured to: encrypt first data with a first type of cryptographic algorithm and encrypt second data with a second type of cryptographic algorithm. The first data is associated with a first security level, and the second data is associated with a second security level that is higher than the first security level. The second type of cryptographic algorithm has a greater encryption strength than the first type of cryptographic algorithm.

    Determining read voltages for memory systems with machine learning

    公开(公告)号:US11386972B2

    公开(公告)日:2022-07-12

    申请号:US17073800

    申请日:2020-10-19

    Abstract: Systems, methods, and apparatus including computer-readable mediums for determining read voltages for memory systems with machine learning (ML) are provided. In one aspect, a memory system includes a memory and a memory controller configured to: obtain a first reading output of memory data using a first read voltage corresponding to a first set of parameters associated with the memory data; if the first reading output fails to pass an Error Correction Code (ECC) test, obtain a second reading output of the memory data using a second read voltage corresponding to a second set of parameters associated with the memory data and including the first set of parameters, the second read voltage being generated using at least one ML algorithm based on the second set of parameters; and if the second reading output passes the ECC test, output the second reading output as a target reading output of the memory data.

    DETERMINING READ VOLTAGES FOR MEMORY SYSTEMS WITH MACHINE LEARNING

    公开(公告)号:US20210241845A1

    公开(公告)日:2021-08-05

    申请号:US17073800

    申请日:2020-10-19

    Abstract: Systems, methods, and apparatus including computer-readable mediums for determining read voltages for memory systems with machine learning (ML) are provided. In one aspect, a memory system includes a memory and a memory controller configured to: obtain a first reading output of memory data using a first read voltage corresponding to a first set of parameters associated with the memory data; if the first reading output fails to pass an Error Correction Code (ECC) test, obtain a second reading output of the memory data using a second read voltage corresponding to a second set of parameters associated with the memory data and including the first set of parameters, the second read voltage being generated using at least one ML algorithm based on the second set of parameters; and if the second reading output passes the ECC test, output the second reading output as a target reading output of the memory data.

    Polar code generating method, and electronic device and non-transitory computer-readable storage medium therefor

    公开(公告)号:US10447436B2

    公开(公告)日:2019-10-15

    申请号:US15890500

    申请日:2018-02-07

    Abstract: A method for generating a polar code includes the steps of: establishing a plurality of polarization matrices that receive a plurality of first input bits via a plurality of first input channels and provide a plurality of first output bits on a plurality of first output channels; selecting at least one to-be-enhanced input channel from the first input channels of the polarization matrices; providing a re-polarization matrix that receives a plurality of second input bits via a plurality of second input channels and provides a plurality of second output bits on a plurality of second output channels, wherein a part of the second output bits is used as the first output bit(s) on the at least one to-be-enhanced input channel; and providing a polar code that comprises the first output bits and a remaining part of the second output bits.

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