Invention Grant
- Patent Title: Operation method of a storage controller configured to control a nonvolatile memory device
-
Application No.: US16999201Application Date: 2020-08-21
-
Publication No.: US11409441B2Publication Date: 2022-08-09
- Inventor: Yeonji Kim , Youngdeok Seo , Chanha Kim , Kangho Roh , Hyunkyo Oh , Heewon Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2019-0126049 20191011
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06N20/00 ; G06F11/10

Abstract:
An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.
Public/Granted literature
- US20210109660A1 OPERATION METHOD OF A STORAGE CONTROLLER CONFIGURED TO CONTROL A NONVOLATILE MEMORY DEVICE Public/Granted day:2021-04-15
Information query