Invention Grant
- Patent Title: Semiconductor device heat extraction by spin thermoelectrics
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Application No.: US16128278Application Date: 2018-09-11
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Publication No.: US11411046B2Publication Date: 2022-08-09
- Inventor: Sasikanth Manipatruni , Tanay Gosavi , Dmitri Nikonov , Ian Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H01L27/16
- IPC: H01L27/16 ; H01L37/00 ; H01L25/16 ; H01L35/32 ; H01L35/30 ; H01L29/417 ; H01L29/06

Abstract:
Electrical devices with an integral thermoelectric generator comprising a spin-Seebeck insulator and a spin orbit coupling material, and associated methods of fabrication. A spin-Seebeck thermoelectric material stack may be integrated into macroscale power cabling as well as nanoscale device structures. The resulting structures are to leverage the spin-Seebeck effect (SSE), in which magnons may transport heat from a source (an active device or passive interconnect) and through the spin-Seebeck insulator, which develops a resulting spin voltage. The SOC material is to further convert the spin voltage into an electric voltage to complete the thermoelectric generation process. The resulting electric voltage may then be coupled into an electric circuit.
Public/Granted literature
- US20200083284A1 SEMICONDUCTOR DEVICE HEAT EXTRACTION BY SPIN THERMOELECTRICS Public/Granted day:2020-03-12
Information query
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