- 专利标题： Semiconductor device with surface insulating film
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申请号： US17002359申请日： 2020-08-25
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公开(公告)号： US11417743B2公开(公告)日： 2022-08-16
- 发明人: Yuki Nakano , Ryota Nakamura
- 申请人： ROHM CO., LTD.
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 代理机构： Hamre, Schumann, Mueller & Larson, P.C.
- 优先权： JP2013-043407 20130305
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/78 ; H01L29/06 ; H01L29/417 ; H01L29/49 ; H01L29/10 ; H01L29/16 ; H01L29/20 ; H01L29/36 ; H01L29/51 ; H01L29/40
摘要：
A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, and a surface insulating film disposed in a manner extending across the cell portion and the outer peripheral portion, and in the cell portion, formed to be thinner than a part in the outer peripheral portion.
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