Invention Grant
- Patent Title: Nanowire thin film transistors with textured semiconductors
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Application No.: US16043593Application Date: 2018-07-24
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Publication No.: US11417775B2Publication Date: 2022-08-16
- Inventor: Shriram Shivaraman , Van H. Le , Abhishek A. Sharma , Gilbert W. Dewey , Benjamin Chu-Kung , Miriam R. Reshotko , Jack T. Kavalieros , Tahir Ghani
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/06 ; H01L29/423 ; H01L21/02 ; H01L21/768 ; H01L23/00

Abstract:
Disclosed herein are transistor gate-channel arrangements that may be implemented in nanowire thin film transistors (TFTs) with textured semiconductors, and related methods and devices. An example transistor gate-channel arrangement may include a substrate, a channel material that includes a textured thin film semiconductor material shaped as a nanowire, a gate dielectric that at least partially wraps around the nanowire, and a gate electrode material that wraps around the gate dielectric. Implementing textured thin film semiconductor channel materials shaped as a nanowire and having a gate stack of a gate dielectric and a gate electrode material wrapping around the nanowire advantageously allows realizing gate all-around or bottom-gate transistor architectures for TFTs with textured semiconductor channel materials.
Public/Granted literature
- US20200035839A1 NANOWIRE THIN FILM TRANSISTORS WITH TEXTURED SEMICONDUCTORS Public/Granted day:2020-01-30
Information query
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