Invention Grant
- Patent Title: Extreme ultraviolet photoresist with high-efficiency electron transfer
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Application No.: US16719757Application Date: 2019-12-18
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Publication No.: US11422465B2Publication Date: 2022-08-23
- Inventor: Wei-Han Lai , Chin-Hsiang Lin , Chien-Wei Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/004 ; C07D247/02 ; C07D247/00 ; C07D273/00

Abstract:
A method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the sensitizer includes a resonance ring that includes nitrogen and at least one double bond. The method further includes performing an exposing process to the photoresist layer. The method further includes developing the photoresist layer, thereby forming a patterned photoresist layer.
Information query
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