- 专利标题： Generating embedded data in memory cells in a memory sub-system
-
申请号： US17086964申请日： 2020-11-02
-
公开(公告)号： US11423989B2公开(公告)日： 2022-08-23
- 发明人: Bruce A. Liikanen , Michael Sheperek , Larry J. Koudele
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Lowenstein Sandler LLP
- 主分类号： G11C16/10
- IPC分类号： G11C16/10 ; G11C16/26 ; G06F3/06 ; G11C11/56 ; G11C16/04
摘要：
A processing device establishes a first data group of memory cells of a memory sub-system and a second data group of memory cells of the memory sub-system. A first portion of the first data group is programmed at a threshold voltage level to set a first embedded data value. A second portion of the second data group of memory cells is programmed at the threshold voltage level offset by an offset voltage level to set a second embedded data value.
公开/授权文献
信息查询
