Invention Grant
- Patent Title: Aqueous solution for etching silicon oxide
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Application No.: US17353092Application Date: 2021-06-21
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Publication No.: US11434424B2Publication Date: 2022-09-06
- Inventor: Guy Vereecke
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP20199275 20200930
- Main IPC: C09K13/04
- IPC: C09K13/04 ; C09K13/08 ; H01L21/306 ; H01L21/311 ; H01L21/3213

Abstract:
An aqueous solution for etching silicon dioxide and method of use are provided. The aqueous solution includes the anion F− in a concentration ranging from 2 to 4 mol/l and a cation of formula RR′R″R′″N+ in a concentration ranging from 1.5 to 2 mol/l, wherein each of R, R′, R″, and R′″ are independently selected from hydrogen and C1-5 alkyl chains with the proviso that the total number of carbon atoms in R, R′, R″, and R′″ combined equals from 8 to 16.
Public/Granted literature
- US20220098485A1 Aqueous Solution for Etching Silicon Oxide Public/Granted day:2022-03-31
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