公开(公告)号：US11434424B2

公开(公告)日：2022-09-06

申请号：US17353092

申请日：2021-06-21

Applicant: IMEC VZW

Inventor： Guy Vereecke

IPC: C09K13/04 ,  C09K13/08 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

Abstract: An aqueous solution for etching silicon dioxide and method of use are provided. The aqueous solution includes the anion F− in a concentration ranging from 2 to 4 mol/l and a cation of formula RR′R″R′″N+ in a concentration ranging from 1.5 to 2 mol/l, wherein each of R, R′, R″, and R′″ are independently selected from hydrogen and C1-5 alkyl chains with the proviso that the total number of carbon atoms in R, R′, R″, and R′″ combined equals from 8 to 16.

公开(公告)号：US20220098485A1

公开(公告)日：2022-03-31

申请号：US17353092

申请日：2021-06-21

Applicant: IMEC VZW

Inventor： Guy Vereecke

IPC: C09K13/04 ,  H01L21/306

Abstract: An aqueous solution for etching silicon dioxide and method of use are provided. The aqueous solution includes the anion F− in a concentration ranging from 2 to 4 mol/l and a cation of formula RR′R″R′″N+ in a concentration ranging from 1.5 to 2 mol/l, wherein each of R, R′, R″, and R′″ are independently selected from hydrogen and C1-5 alkyl chains with the proviso that the total number of carbon atoms in R, R′, R″, and R′″ combined equals from 8 to 16.