Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16874176Application Date: 2020-05-14
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Publication No.: US11435525B2Publication Date: 2022-09-06
- Inventor: Tetsuya Iida , Yasutaka Nakashiba
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Main IPC: G02B6/122
- IPC: G02B6/122 ; G02B6/30 ; G02B6/12 ; G02B6/24 ; H04B10/67

Abstract:
A semiconductor device includes a first insulating film, a first optical waveguide and a second optical waveguide. The first insulating film has a first surface and a second surface opposite to the first surface. The first optical waveguide is formed on the first surface of the first insulating film. The second optical waveguide is formed on the second surface of the first insulating film. The second optical waveguide, in plan view, overlaps with an end portion of the first optical waveguide without overlapping with another end portion of the first optical waveguide.
Public/Granted literature
- US20210356660A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-11-18
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