A magnetoresistive random-access memory (MRAM) device includes a first cell selectively connected to a first bit line and a second cell selectively connected to a second bit line. The MRAM device further includes a shared transistor connected to the first cell and connected to the second cell. The MRAM device further includes a first selector device and a second selector device. The first selector device is configured to permit current to flow through the first cell to the shared transistor when a voltage applied to the first selector device is larger than a threshold activation voltage. The second selector device is configured to permit current to flow through the second cell to the shared transistor when a voltage applied to the second selector device is larger than a threshold activation voltage. The MRAM cell further includes a word line connected to a gate of the shared transistor.