Invention Grant
- Patent Title: Heterogeneous integrated wideband high electron mobility transistor power amplifier with a single-crystal acoustic resonator/filter
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Application No.: US16854313Application Date: 2020-04-21
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Publication No.: US11437367B2Publication Date: 2022-09-06
- Inventor: Je-Hsiung Lan , Ranadeep Dutta , Jonghae Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L27/06 ; H01L29/20 ; H01L29/66 ; H03F3/213
Abstract:
A 3D integrated circuit (3D IC) chip is described. The 3D IC chip includes a die having a compound semiconductor high electron mobility transistor (HEMT) active device. The compound semiconductor HEMT active device is composed of compound semiconductor layers on a single crystal, compound semiconductor layer. The 3D IC chip also includes an acoustic device integrated in the single crystal, compound semiconductor layer. The 3D IC chip further includes a passive device integrated in back-end-of-line layers of the die on the single crystal, compound semiconductor layer.
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