Invention Grant
- Patent Title: Stacked interposer structures, microelectronic device assemblies including same, and methods of fabrication, and related electronic systems
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Application No.: US16715242Application Date: 2019-12-16
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Publication No.: US11444067B2Publication Date: 2022-09-13
- Inventor: Owen R. Fay , Chan H. Yoo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L25/18 ; H01L25/16 ; H01L23/48 ; H01L23/00 ; H01L25/00
Abstract:
An interposer comprises a semiconductor material and includes cache memory under a location on the interposer for a host device. Memory interface circuitry may also be located under one or more locations on the interposer for memory devices. Microelectronic device assemblies incorporating such an interposer and comprising a host device and multiple memory devices are also disclosed, as are methods of fabricating such microelectronic device assemblies.
Public/Granted literature
Information query
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