- 专利标题: Image sensor and method of manufacturing same
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申请号: US16878303申请日: 2020-05-19
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公开(公告)号: US11450704B2公开(公告)日: 2022-09-20
- 发明人: Sangsu Park , Kwansik Kim , Sangchun Park , Beomsuk Lee , Taeyon Lee
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Volentine, Whitt & Francos, PLLC
- 优先权: KR10-2019-0138988 20191101
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H04N9/04 ; H04N5/357 ; H01L51/42 ; H01L31/032
摘要:
An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.
公开/授权文献
- US20210136330A1 IMAGE SENSOR AND METHOD OF MANUFACTURING SAME 公开/授权日:2021-05-06
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