公开(公告)号：US10910419B2

公开(公告)日：2021-02-02

申请号：US16418557

申请日：2019-05-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Gwideok Ryan Lee ,  Taeyon Lee ,  Sangchun Park

IPC分类号： H01L27/146 ,  H01L31/032 ,  H04N5/374 ,  H01L29/786 ,  H01L29/417

摘要： An image sensor is provided and includes a semiconductor substrate having a first conductivity type, a photoelectric conversion region in the semiconductor substrate and having a second conductivity type, an oxide semiconductor pattern adjacent to a first surface of the semiconductor substrate, and a transfer gate on the first surface and adjacent to the photoelectric conversion region and the oxide semiconductor pattern.

公开(公告)号：US11450704B2

公开(公告)日：2022-09-20

申请号：US16878303

申请日：2020-05-19

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sangsu Park ,  Kwansik Kim ,  Sangchun Park ,  Beomsuk Lee ,  Taeyon Lee

IPC分类号： H01L27/146 ,  H04N9/04 ,  H04N5/357 ,  H01L51/42 ,  H01L31/032

摘要： An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

公开(公告)号：US12074189B2

公开(公告)日：2024-08-27

申请号：US17947702

申请日：2022-09-19

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sangsu Park ,  Kwansik Kim ,  Sangchun Park ,  Beomsuk Lee ,  Taeyon Lee

IPC分类号： H01L27/146 ,  H01L31/032 ,  H04N25/13 ,  H04N25/616 ,  H04N25/617 ,  H10K30/65

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14665 ,  H04N25/13 ,  H04N25/617 ,  H10K30/65 ,  H01L27/14621 ,  H01L27/1464 ,  H01L31/0323 ,  H04N25/616

摘要： An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

公开(公告)号：US20230054728A1

公开(公告)日：2023-02-23

申请号：US17737226

申请日：2022-05-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sangchun Park ,  Sungbong Park ,  Beomsuk Lee

IPC分类号： H01L27/146

摘要： An image sensor includes pixels arranged parallel to an upper surface of a substrate and a pixel isolation film disposed between the pixels. Each pixel includes a floating diffusion region doped with impurities of a first conductivity type, a transfer gate structure adjacent to the floating diffusion region, and a transistor. The transfer gate structure includes a transfer gate electrode layer, a transfer gate insulating layer, and a transfer gate spacer adjacent to the transfer gate insulating layer in a first direction parallel to the upper surface of the substrate, and a portion of the transfer gate spacer is disposed between the floating diffusion region and the transfer gate electrode layer. In each pixel, a floating diffusion contact connected to the floating diffusion region is disposed more adjacent in the first direction to the pixel isolation film than to the transfer gate structure.

公开(公告)号：US11569298B2

公开(公告)日：2023-01-31

申请号：US17034316

申请日：2020-09-28

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sangchun Park ,  Kwansik Kim ,  Hongki Kim ,  Sangsu Park ,  Beomsuk Lee ,  Taeyon Lee ,  Gwideok Ryan Lee

IPC分类号： H01L27/30 ,  H01L27/146 ,  H01L51/44

摘要： An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels. An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.