Invention Grant
- Patent Title: Gallium nitride structure, piezoelectric element, method of manufacturing piezoelectric element, and resonator using piezoelectric element
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Application No.: US16126248Application Date: 2018-09-10
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Publication No.: US11451211B2Publication Date: 2022-09-20
- Inventor: Keiichi Umeda , Takaaki Mizuno , Yasuhiro Aida , Masato Uehara , Toshimi Nagase , Morito Akiyama
- Applicant: Murata Manufacturing Co., Ltd. , National Institute of Advanced Industrial Science and Technology
- Applicant Address: JP Nagaokakyo; JP Tokyo
- Assignee: Murata Manufacturing Co., Ltd.,National Institute of Advanced Industrial Science and Technology
- Current Assignee: Murata Manufacturing Co., Ltd.,National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Nagaokakyo; JP Tokyo
- Agency: ArentFox Schiff LLP
- Priority: JPJP2016-048236 20160311
- Main IPC: H01L41/047
- IPC: H01L41/047 ; H03H9/17 ; H01L41/187 ; H01L41/29 ; H01L41/316 ; H01L41/08 ; H03H3/02 ; H03H9/05 ; H03H9/13 ; H03H9/02 ; H03H9/15
Abstract:
A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer.
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