Invention Grant
- Patent Title: Crystal growth apparatus including heater with multiple regions and crystal growth method therefor
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Application No.: US17072466Application Date: 2020-10-16
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Publication No.: US11453959B2Publication Date: 2022-09-27
- Inventor: Yohei Fujikawa
- Applicant: SHOWA DENKO K.K.
- Applicant Address: JP Tokyo
- Assignee: SHOWA DENKO K.K.
- Current Assignee: SHOWA DENKO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2019-197404 20191030
- Main IPC: C30B23/06
- IPC: C30B23/06 ; C30B35/00 ; C30B23/00 ; C30B29/36
Abstract:
A crystal growth apparatus according to the present embodiment includes a crucible, a heater which is installed on an outward side of the crucible and surrounds the crucible, and a coil which is installed on an outward side of the heater and surrounds the heater, in which an inner surface of the heater on the crucible side includes a first region, and a second region which is further away from an outer side surface of the crucible than the first region is.
Public/Granted literature
- US20210130981A1 CRYSTAL GROWTH APPARATUS AND CRYSTAL GROWTH METHOD Public/Granted day:2021-05-06
Information query
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